Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate

2010 ◽  
Vol 107 (5) ◽  
pp. 054906 ◽  
Author(s):  
Ina T. Martin ◽  
Charles W. Teplin ◽  
James R. Doyle ◽  
Howard M. Branz ◽  
Paul Stradins
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Epitaxy

Comparative Study of Hot-Wire Chemical Vapor Deposition onto (100) Si Near 600°C: Epitaxial and Polycrystalline Silicon Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Charles W. Teplin ◽  
Howard M. Branz ◽  
Kim M. Jones ◽  
Bobby To ◽  
Eugene Iwaniczko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Borosilicate Glasses ◽  
Hot Wire ◽  
Silicon Epitaxy ◽  
Dislocation Defects ◽  
Polycrystalline Silicon Films

AbstractPreviously, we reported improved silicon epitaxy by hot-wire chemical vapor deposition (HWCVD) between about 600 and 650°C. Such temperatures are compatible with the thickening of large-grained Si seed layers on borosilicate glasses or other inexpensive substrates. Here, we provide detailed real-time spectroscopic ellipsometry (RTSE) and x-ray diffraction (XRD) analysis of two films grown near 600°C. A film grown at 594°C shows breakdown to a polycrystalline phase, while a film grown at 627°C is entirely epitaxial. Transmission electron microscopy (TEM) of this epitaxial film shows dislocation defects that originate at the substrate/film interface, suggesting that an optimized surface preparation could yield lower defect densities.

Silicon Nitride as Dielectric Medium Deposited at Ultra High Deposition Rate (>7 nm/s) using Hot-Wire Chemical Vapor Deposition

2007 ◽  
Vol 46 (3B) ◽  
pp. 1290-1294 ◽  
Author(s):  
Vasco Verlaan ◽  
Silvester Houweling ◽  
Karine van der Werf ◽  
Hanno D. Goldbach ◽  
Ruud E. I. Schropp
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dielectric Medium ◽  
High Deposition Rate ◽  
Hot Wire

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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