Highly Conducting Phosphorous Doped nc-Si:H Thin Films Deposited at High Deposition Rate by Hot-Wire Chemical Vapor Deposition Method

2012 ◽  
Vol 12 (11) ◽  
pp. 8459-8466 ◽  
Author(s):  
V. S. Waman ◽  
M. M. Kamble ◽  
S. S. Ghosh ◽  
Azam Mayabadi ◽  
V. G. Sathe ◽  
...  
2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


2008 ◽  
Vol 516 (5) ◽  
pp. 687-690 ◽  
Author(s):  
Hiroaki Yasuoka ◽  
Masahiro Yoshida ◽  
Ken Sugita ◽  
Keisuke Ohdaira ◽  
Hideyuki Murata ◽  
...  

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