Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks

2010 ◽  
Vol 96 (3) ◽  
pp. 032105 ◽  
Author(s):  
Yevgeniya Larionova ◽  
Verena Mertens ◽  
Nils-Peter Harder ◽  
Rolf Brendel
1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


2014 ◽  
Vol 116 (5) ◽  
pp. 054507 ◽  
Author(s):  
Saskia Kühnhold ◽  
Pierre Saint-Cast ◽  
Bishal Kafle ◽  
Marc Hofmann ◽  
Francesco Colonna ◽  
...  

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