High-temperature degradation in plasma-enhanced chemical vapor deposition Al2O3 surface passivation layers on crystalline silicon

2014 ◽  
Vol 116 (5) ◽  
pp. 054507 ◽  
Author(s):  
Saskia Kühnhold ◽  
Pierre Saint-Cast ◽  
Bishal Kafle ◽  
Marc Hofmann ◽  
Francesco Colonna ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Passivation Layers

Si3N4 Double Passivation Methods for Optimizing the DC Properties in a Gamma-Gate AlGaN/GaN HEMT Using Plasma Enhanced Chemical Vapor Deposition

2011 ◽  
Vol 311-313 ◽  
pp. 1793-1797 ◽  
Author(s):  
Sung Jin Cho ◽  
Cong Wang ◽  
Won Sang Lee ◽  
Nam Young Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Bottom Surface ◽  
Passivation Film ◽  
Gan Hemt ◽  
Threshold Voltages ◽  
Saturation Current Density ◽  
Passivation Layers

Double passivation layers, Si3N4 on Si3N4 (Si3N4 / Si3N4), have been implemented onto the top and bottom surface passivation film layers for a gamma-gate AlGaN/GaN HEMT using Plasma Enhanced Chemical Vapor Deposition (PECVD). The effects of the reduced current collapse electro characteristics were then compared to devices using double passivation as SiO2 on SiO2 (SiO2 / SiO2). Both samples were tested under the same conditions: Vds = 0 to 15 V and Vgs = 1 to -5 V. The Si3N4 / Si3N4 passivation results show a maximum saturation current density (Ids max) of 761 mA/mm, a peak extrinsic trans conductance (gm max) of 200 mS/mm, and threshold voltages of (Vth) -4.5 V, which increases up to 18% and 5% than those of SiO2/SiO2 double passivation.

scholarly journals Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

2011 ◽  
Vol 98 (15) ◽  
pp. 153514 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Surface Passivation

Mist chemical vapor deposition of aluminum oxide thin films for rear surface passivation of crystalline silicon solar cells

2014 ◽  
Vol 7 (2) ◽  
pp. 021303 ◽  
Author(s):  
Takayuki Uchida ◽  
Toshiyuki Kawaharamura ◽  
Kenji Shibayama ◽  
Takahiro Hiramatsu ◽  
Hiroyuki Orita ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Aluminum Oxide ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Rear Surface ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells
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