Fabrication of m-axial InGaN nanocolumn arrays on silicon substrates using triethylgallium precursor chemical vapor deposition approach

2014 ◽  
Vol 299 ◽  
pp. 92-96 ◽  
Author(s):  
Chia-Ming Liu ◽  
Yian Tai ◽  
Kuei-Hsien Chen ◽  
Li-Chyong Chen
1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


2018 ◽  
Vol 112 (18) ◽  
pp. 181907 ◽  
Author(s):  
Raju Ahmed ◽  
M. Nazari ◽  
B. L. Hancock ◽  
J. Simpson ◽  
C. Engdahl ◽  
...  

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