Drain current model for thin-film transistors with interface trap states

Hiroshi Tsuji; Yoshinari Kamakura; Kenji Taniguchi

doi:10.1063/1.3289439

Drain current model for thin-film transistors with interface trap states

Journal of Applied Physics ◽

10.1063/1.3289439 ◽

2010 ◽

Vol 107 (3) ◽

pp. 034502 ◽

Cited By ~ 16

Author(s):

Hiroshi Tsuji ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Interface Trap ◽

Trap States

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Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2612679 ◽

2016 ◽

Vol 63 (11) ◽

pp. 4423-4431 ◽

Cited By ~ 9

Author(s):

Hongyu He ◽

Yuan Liu ◽

Binghui Yan ◽

Xinnan Lin ◽

Xueren Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Organic Thin Film Transistors ◽

Trap States ◽

Organic Thin Film ◽

Different Temperatures

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Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2721436 ◽

2017 ◽

Vol 64 (9) ◽

pp. 3654-3660 ◽

Cited By ~ 4

Author(s):

Hongyu He ◽

Yuan Liu ◽

Binghui Yan ◽

Xinnan Lin ◽

Xueren Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Trap States ◽

Different Temperatures ◽

Amorphous Ingazno

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Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) ◽

10.1109/cad-tft.2018.8608111 ◽

2018 ◽

Author(s):

Hongyu He ◽

Yuan Liu ◽

Binghui Yan ◽

Xinnan Lin ◽

Xueren Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Current Model ◽

Drain Current ◽

Trap States ◽

Silicon Thin Film ◽

Different Temperatures

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Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of Applied Physics ◽

10.1063/1.4831665 ◽

2013 ◽

Vol 114 (18) ◽

pp. 184502 ◽

Cited By ~ 25

Author(s):

A. Tsormpatzoglou ◽

N. A. Hastas ◽

N. Choi ◽

F. Mahmoudabadi ◽

M. K. Hatalis ◽

...

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

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A surface-potential-based drain current model suitable for poly-Si thin film transistors with thin body and thin gate oxide

Journal of Physics Conference Series ◽

10.1088/1742-6596/1141/1/012066 ◽

2018 ◽

Vol 1141 ◽

pp. 012066

Author(s):

Zhen Zhu ◽

Junhao Chu

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Gate Oxide ◽

Thin Body ◽

Thin Gate Oxide ◽

Si Thin Film

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Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.014301 ◽

2017 ◽

Vol 57 (1) ◽

pp. 014301 ◽

Cited By ~ 4

Author(s):

Ting Qin ◽

Congwei Liao ◽

Shengxiang Huang ◽

Tianbao Yu ◽

Lianwen Deng

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Dual Gate ◽

Indium Gallium

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Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2236332 ◽

2013 ◽

Vol 60 (3) ◽

pp. 1122-1127

Author(s):

Lisa L. Wang ◽

James B. Kuo ◽

Shengdong Zhang

Keyword(s):

Thin Film ◽

Grain Boundary ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Strong Inversion ◽

Si Thin Film

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A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

Solid-State Electronics ◽

10.1016/j.sse.2017.11.007 ◽

2018 ◽

Vol 141 ◽

pp. 23-30 ◽

Cited By ~ 3

Author(s):

M.X. Cai ◽

R.H. Yao

Keyword(s):

Thin Film ◽

Temperature Effects ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

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Extraction of the Density of Interface Trap States in Thin-Film Transistors

ECS Transactions ◽

10.1149/1.2980533 ◽

2019 ◽

Vol 16 (9) ◽

pp. 73-77

Author(s):

Hiroshi Tsuji ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Interface Trap ◽

Trap States

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Drain current model based on the Meyer-Neldel Rule for polycrystalline ZnO thin-film transistors at different temperatures

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2017.8060136 ◽

2017 ◽

Author(s):

Hongyu He ◽

Yuan Liu ◽

Binghui Yan ◽

Xinnan Lin ◽

Xueren Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Zno Thin Film ◽

Model Based ◽

Different Temperatures

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