Extraction of the Density of Interface Trap States in Thin-Film Transistors

2019 ◽  
Vol 16 (9) ◽  
pp. 73-77
Author(s):  
Hiroshi Tsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Interface Trap ◽  
Trap States

Drain current model for thin-film transistors with interface trap states

2010 ◽  
Vol 107 (3) ◽  
pp. 034502 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Interface Trap ◽  
Trap States

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

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