Calculated temperature dependence of the band gap of HgTe‐CdTe superlattices

1985 ◽  
Vol 57 (4) ◽  
pp. 1403-1405 ◽  
Author(s):  
Y. Guldner ◽  
G. Bastard ◽  
M. Voos
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Calculated Temperature ◽  
Calculated Temperature Dependence

The Thermal Emission of Iodine

1974 ◽  
Vol 52 (19) ◽  
pp. 1862-1871
Author(s):  
J. David Brown ◽  
George Burns
Keyword(s):  
Experimental Data ◽  
Shock Wave ◽  
Temperature Dependence ◽  
Electronic State ◽  
Reasonable Agreement ◽  
Thermal Emission ◽  
Electronic States ◽  
Excited Electronic States ◽  
Calculated Temperature ◽  
Calculated Temperature Dependence

The temperature dependence of emission from iodine, heated in a shock wave to 1000 K–2000 K, has been measured at 4550, 5550, 6950, 7550, and 7820 Å. Preliminary measurements of the emission at 6380 Å were also made. The temperature dependence of the emission was calculated at these wavelengths for transitions to the ground electronic state X(1Σg+) of iodine from the excited electronic states, A(3Π1u), (1Π1u), and [Formula: see text]. The calculated results are in a reasonable agreement with experimental data. For the banded emission due to the B → X transition, a theory of the temperature dependence of emission was developed. At 6950, 7550, and 7820 Å, the results of this theory agree with the experimental data thus identifying the B → X transition as the source of emission at these wavelengths. The temperature dependence of emission at 4550 Å is consistent with calculated temperature dependence for either (1Π1u) → X or [Formula: see text] transitions. The temperature dependence of the emission at 5550 Å is consistent with calculated temperature dependence for the above two transitions, as well as for the A(3Π1u) → X transition.

Calculations on the rate of photodissociation of hexafluoroacetone

1968 ◽  
Vol 46 (2) ◽  
pp. 307-310 ◽  
Author(s):  
P. G. Bowers
Keyword(s):  
Temperature Dependence ◽  
Singlet State ◽  
Excited Singlet State ◽  
Kcal Mole ◽  
Excited Singlet ◽  
Calculated Temperature ◽  
Experimental Variation ◽  
Vibrational Levels ◽  
Calculated Temperature Dependence

The dissociation of hexafluoroacetone from high vibrational levels of its first excited singlet state is treated by the methods of RRKM unimolecular theory. Predictions of the relative photodissociation rates for various exciting wavelengths are in reasonable accord with the observed rates and indicate a critical predissociation energy of about 6 kcal/mole. The calculated temperature dependence is less satisfactory and somewhat lower than the experimental variation.

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

2017 ◽  
Vol 50 (40) ◽  
pp. 40LT02 ◽  
Author(s):  
Peiji Geng ◽  
Weiguo Li ◽  
Xianhe Zhang ◽  
Xuyao Zhang ◽  
Yong Deng ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

scholarly journals Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1621
Author(s):  
И.В. Боднарь ◽  
Б.Т. Чан ◽  
В.Н. Павловский ◽  
И.Е. Свитенков ◽  
Г.П. Яблонский
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Spinel Structure ◽  
Semiconductor Materials ◽  
Transmittance Spectra ◽  
Temperature Range

AbstractMnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

Temperature dependence of the GaNxP1−x band gap and effect of band crossover

2002 ◽  
Vol 81 (21) ◽  
pp. 3984-3986 ◽  
Author(s):  
G. Yu. Rudko ◽  
I. A. Buyanova ◽  
W. M. Chen ◽  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
X Band

Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film

2008 ◽  
Vol 17 (6) ◽  
pp. 2245-2250 ◽  
Author(s):  
Xu Hong-Yan ◽  
Jian Ao-Qun ◽  
Xue Chen-Yang ◽  
Chen Yang ◽  
Zhang Bin-Zhen ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Band Gap ◽  
Biaxial Strain

Temperature dependence of the band gap of Cd1−xZnxTe alloys of low zinc concentrations

1996 ◽  
Vol 79 (10) ◽  
pp. 7713-7717 ◽  
Author(s):  
F. G. Sánchez‐Almazan ◽  
H. Navarro‐Contreras ◽  
G. Ramírez‐Flores ◽  
M. A. Vidal ◽  
O. Zelaya‐Angel ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Zinc Concentrations
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