Irradiation Mixing of Al into U3Si

1995 ◽  
Vol 396 ◽  
Author(s):  
R. C. Birtcher ◽  
F.-R. Ding ◽  
B. J. Kestel ◽  
P. M. Baldo ◽  
N. J. Zaluzec
Keyword(s):  
Thin Film ◽  
Oxide Layer ◽  
Initial Dose ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Swelling Behavior ◽  
Threshold Dose ◽  
Phase Growth ◽  
Fission Gas ◽  
Al Thin Film

AbstractThermal and irradiation induced intermixing of uranium suicide reactor fuels with the aluminum cladding is an important consideration in understanding their fission gas and fuel swelling behavior. We have used Rutherford backscattering to follow the behavior of an Al thin film on U3Si and U3Si2 during 1.5 MeV Kr ion irradiation at temperatures of 30 and 350°C. After an initial dose during which no intermixing occurs, the Al mixes quickly into U3Si. The threshold dose is believed to be associated with an oxide layer between the Al and the uranium suicide. At 300°C and doses greater than threshold, rates of mixing and aluminide phase growth are extracted.

An x‐ray optical study of layered phase growth in Au‐Al thin film couples

1980 ◽  
Vol 51 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
E. Ehrmann‐Falkenau ◽  
H. Bangert
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
Phase Growth ◽  
X Ray ◽  
Al Thin Film

Kinetics of Phase Formation in Cu-Al Thin Films Couples Studied by In-Situ X-Ray and Rutherford Backscattering Analysis.

1983 ◽  
Vol 25 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
High Vacuum ◽  
Interface Reaction ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Different Temperatures ◽  
Al Thin Film ◽  
Backscattering Analysis

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

scholarly journals Influence of Thermal Annealing on the Electrical Properties of Poly(3-hexylthiophene)-Based Thin Film Diodes

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Polymer Chains ◽  
Hole Injection ◽  
Before And After ◽  
Output Characteristics ◽  
Al Thin Film ◽  
Poly Styrene Sulfonate

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.

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