A simultaneous increase in the ZT and the corresponding critical temperature of p-type Bi0.4Sb1.6Te3by a combined strategy of dual nanoinclusions and carrier engineering

2014 ◽  
Vol 2 (47) ◽  
pp. 20288-20294 ◽  
Author(s):  
Ye Xiao ◽  
Jun-you Yang ◽  
Qing-hui Jiang ◽  
Liang-wei Fu ◽  
Yu-bo Luo ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Simultaneous Increase ◽  
Combined Strategy ◽  
P Type

scholarly journals Pressure effect on the electrical resistance of Y0.77Pr0.23Ba2Cu3O7-δ single crystals

2020 ◽  
Keyword(s):  
Critical Temperature ◽  
Hydrostatic Pressure ◽  
Single Crystals ◽  
Electrical Resistance ◽  
Simultaneous Increase ◽  
Critical Temperatures ◽  
Electron Phonon Interaction ◽  
The Matrix ◽  
Critical Temperature Tc ◽  
Effect Of Hydrostatic Pressure

The effect of hydrostatic pressure up to 12 kbar on the electrical resistance in the basal ab-plane of optimally oxygen-doped (δ<0.1) single crystals Y1–xPrxBa2Cu3O7–δ moderately doped with praseodymium (x≈0.23) with a critical temperature Tc≈67 K. Compared to undoped single-crystal YBa2Cu3O7–δ, doping with praseodymium led to a decrease in the critical temperature by ≈24 K with a simultaneous increase in ρab (300 K) by ≈130 μΩcm. In the region of the transition to the superconducting state, several clearly pronounced peaks are observed on the dρ/dT – T curves, which indicates the presence of several phases with different critical temperatures in the sample. The application of high hydrostatic pressure leads to an increase in Tc by about 3 K. This increase slows down with increasing pressure, and the baric derivatives, dTc/dP, decrease from 0.44 K/kbar at atmospheric pressure to 0.14 K/kbar at 11 kbar. The comparatively weak change in the critical temperature under the action of hydrostatic pressure is due to the relatively small value of the orthorhombic distortion, (a–b)/a. The change in the baric derivative dTc/dP upon all-round compression of the sample is due to the fact that, along with an increase in the Debye temperature, the matrix element of the electron-phonon interaction also increases. Possible mechanisms of the effect of high pressure on Tc are discussed taking into account the presence of features in the electronic spectrum of carriers.

Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

2009 ◽  
Vol 95 (23) ◽  
pp. 231910 ◽  
Author(s):  
Sungyoul Choi ◽  
Bong-Jun Kim ◽  
Yong Wook Lee ◽  
Yong Sik Lim ◽  
Jeongyong Choi ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Temperature Sensor ◽  
P Type

scholarly journals Superconductivity in CaBi2

2016 ◽  
Vol 18 (31) ◽  
pp. 21737-21745 ◽  
Author(s):  
M. J. Winiarski ◽  
B. Wiendlocha ◽  
S. Gołąb ◽  
S. K. Kushwaha ◽  
P. Wiśniewski ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Critical Temperature ◽  
Single Crystals ◽  
Type I ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
P Type

Type-I superconductivity is observed with critical temperature Tc = 2.0 K in self-flux-grown single crystals of CaBi2. Calculations show the importance of spin–orbit interactions on the electronic structure.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Investigating the functional link between TMEM165 and SPCA1

2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  
Keyword(s):  
Subcellular Localization ◽  
Complete Loss ◽  
Protein Family ◽  
Uncharacterized Protein ◽  
Functional Link ◽  
P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

Structural dynamics of P-type ATPase ion pumps

2019 ◽  
Vol 47 (5) ◽  
pp. 1247-1257 ◽  
Author(s):  
Mateusz Dyla ◽  
Sara Basse Hansen ◽  
Poul Nissen ◽  
Magnus Kjaergaard
Keyword(s):  
Structural Dynamics ◽  
Single Molecule ◽  
New Technologies ◽  
Atp Hydrolysis ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Time Resolved ◽  
Dynamics Simulations ◽  
Types Of Information ◽  
P Type

Abstract P-type ATPases transport ions across biological membranes against concentration gradients and are essential for all cells. They use the energy from ATP hydrolysis to propel large intramolecular movements, which drive vectorial transport of ions. Tight coordination of the motions of the pump is required to couple the two spatially distant processes of ion binding and ATP hydrolysis. Here, we review our current understanding of the structural dynamics of P-type ATPases, focusing primarily on Ca2+ pumps. We integrate different types of information that report on structural dynamics, primarily time-resolved fluorescence experiments including single-molecule Förster resonance energy transfer and molecular dynamics simulations, and interpret them in the framework provided by the numerous crystal structures of sarco/endoplasmic reticulum Ca2+-ATPase. We discuss the challenges in characterizing the dynamics of membrane pumps, and the likely impact of new technologies on the field.

Sign in / Sign up

Export Citation Format

Share Document