scholarly journals Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si

2009 ◽  
Vol 95 (19) ◽  
pp. 191912 ◽  
Author(s):  
G. V. Soares ◽  
I. J. R. Baumvol ◽  
S. A. Corrêa ◽  
C. Radtke ◽  
F. C. Stedile
Keyword(s):  
Water Vapor ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown

The Effect of a Silicon-Boron Phase on Thermally Grown Silicon Oxide Films

1970 ◽  
Vol 117 (2) ◽  
pp. 272 ◽  
Author(s):  
William A. FitzGibbons ◽  
Thomas Kloffenstein ◽  
Karl M. Busen
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown

Tunnel current in n-poly-Si/SiO2/n-Si structures with the 40–75 Å thermally grown silicon oxide films under very strong fields

1993 ◽  
Vol 65-66 ◽  
pp. 835-839 ◽  
Author(s):  
O.G. Balev ◽  
S.G. Bantser ◽  
A.I. Klimovskaja ◽  
Y.A. Okhrimenko ◽  
E.M. Kostenko ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Tunnel Current ◽  
Strong Fields ◽  
Thermally Grown

Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon

1996 ◽  
Vol 102 ◽  
pp. 142-146 ◽  
Author(s):  
S. Kennou ◽  
S. Ladas ◽  
M.G. Grimaldi ◽  
T.A. Nguyen Tan ◽  
J.Y. Veuillen
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown

A Nanoindentation Study of Thermally-Grown-Oxide Films on Silicon

2004 ◽  
Vol 841 ◽  
Author(s):  
Fatih Helvaci ◽  
Junghyun Cho
Keyword(s):  
Thin Films ◽  
Inverse Analysis ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown Oxide ◽  
Si Substrate ◽  
Depth Sensing ◽  
Fundamental Understanding ◽  
Elastic Mismatch ◽  
Thermally Grown

ABSTRACTWe explore the effect of the substrate on mechanical behavior of thin films using a depth-sensing indentation. For this purpose, nanoindentation has been performed on thermally grown silicon oxide films on the silicon substrate. One primary goal of this study is to extract ‘film-only’ mechanical properties from the nanoindentation data by subtracting the substrate effect. It is also shown that elastic modulus of the film is more influenced by the substrate than hardness due to a larger elastic extension beyond a plastically deformed region, as well as a larger elastic mismatch between the SiO2 film and the Si substrate. Further, an inverse analysis of indentation data is proposed to estimate a thickness of thin films. Consequently, this study provides a fundamental understanding in mechanical phenomena of thin films occurring at nanoscales.

The Composition and Properties of PECVD Silicon Oxide Films

1985 ◽  
Vol 132 (8) ◽  
pp. 2012-2019 ◽  
Author(s):  
P. Pan ◽  
L. A. Nesbit ◽  
R. W. Douse ◽  
R. T. Gleason
Keyword(s):  
Silicon Oxide ◽  
Oxide Films
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