2018 22nd International Conference on Ion Implantation Technology (IIT)
Latest Publications

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Published By IEEE

9781538668283, 9781538668290

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

ION-X Dopant Gas Delivery System Performance Characterization at Axcelis

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807983 ◽

2018 ◽

Author(s):

J. Arno ◽

O. K. Farha ◽

W. Morris ◽

P. W. Siu ◽

G. M Tom ◽

...

Keyword(s):

Delivery System ◽

System Performance ◽

Performance Characterization

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Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807947 ◽

2018 ◽

Author(s):

Kazuhiko Fuse ◽

Hideaki Tanimura ◽

Takayuki Aoyama ◽

Shinichi Kato ◽

Yoshihide Nozaki ◽

...

Keyword(s):

Dopant Concentration ◽

Sol Gel ◽

Flash Lamp ◽

High Dopant Concentration

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2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807938 ◽

2018 ◽

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The Defect Formation Mechanism Associated with Low Dose Implants into Si Fin Structures

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807979 ◽

2018 ◽

Author(s):

Kevin Jones ◽

Emily Turner ◽

Jae Young Lee ◽

Hans van Meer ◽

Naushad Variam ◽

...

Keyword(s):

Formation Mechanism ◽

Low Dose ◽

Defect Formation

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Boron Deposition Control for p-type Plasma Doping

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807913 ◽

2018 ◽

Author(s):

Vikram Bhosle ◽

Nicholas Bateman ◽

Deven Raj ◽

Tim Miller

Keyword(s):

Plasma Doping ◽

P Type ◽

Deposition Control

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The Effects of Preheating in Millisecond Anneals on Dopant Activation in Silicon

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807969 ◽

2018 ◽

Author(s):

Paul Timans ◽

Christian Pfahler ◽

Markus Hagedorn ◽

Alexandr Cosceev ◽

Manuela Zwissler

Keyword(s):

Dopant Activation

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Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807946 ◽

2018 ◽

Cited By ~ 1

Author(s):

Serguei I. Kondratenko ◽

Leonard M. Rubin ◽

Eric A. G. Webster

Keyword(s):

High Energy ◽

Very High Energy ◽

Very High

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Enriched 11Boron Trifluoride and Hydrogen Mixture for Performance Improvement on Applied Materials E-500 Implanter

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807971 ◽

2018 ◽

Author(s):

Barry Chambers ◽

Francisco E. Cruz

Keyword(s):

Performance Improvement ◽

Hydrogen Mixture

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Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807894 ◽

2018 ◽

Author(s):

Ruey-Dar Chang ◽

Hsueh-Chun Liao ◽

Jui-Chang Lin ◽

Jung-Ruey Tsai

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Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

2018 22nd International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2018.8807963 ◽

2018 ◽

Author(s):

Laurent Lachal ◽

Fabrice Nemouchi ◽

Frederic Mazen ◽

Philippe Rodriguez ◽

Magali Gregoire ◽

...

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2018 22nd International Conference on Ion Implantation Technology (IIT)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

ION-X Dopant Gas Delivery System Performance Characterization at Axcelis

Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing

Table of contents

The Defect Formation Mechanism Associated with Low Dose Implants into Si Fin Structures

Boron Deposition Control for p-type Plasma Doping

The Effects of Preheating in Millisecond Anneals on Dopant Activation in Silicon

Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions

Enriched 11Boron Trifluoride and Hydrogen Mixture for Performance Improvement on Applied Materials E-500 Implanter

Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

Export Citation Format

2018 22nd International Conference on Ion Implantation Technology (IIT)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

ION-X Dopant Gas Delivery System Performance Characterization at Axcelis

Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing

Table of contents

The Defect Formation Mechanism Associated with Low Dose Implants into Si Fin Structures

Boron Deposition Control for p-type Plasma Doping

The Effects of Preheating in Millisecond Anneals on Dopant Activation in Silicon

Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions

Enriched 11Boron Trifluoride and Hydrogen Mixture for Performance Improvement on Applied Materials E-500 Implanter

Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

2018 22nd International Conference on Ion Implantation Technology (IIT)
Latest Publications