Erratum: Low‐threshold double‐heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

H. Kressel; M. Ettenberg

doi:10.1063/1.325567

Erratum: Low‐threshold double‐heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Journal of Applied Physics ◽

10.1063/1.325567 ◽

1978 ◽

Vol 49 (11) ◽

pp. 5688-5688

Author(s):

H. Kressel ◽

M. Ettenberg

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Gaas Laser ◽

Low Threshold ◽

Theory And Experiment

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Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Journal of Applied Physics ◽

10.1063/1.323150 ◽

1976 ◽

Vol 47 (8) ◽

pp. 3533-3537 ◽

Cited By ~ 74

Author(s):

H. Kressel ◽

M. Ettenberg

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Gaas Laser ◽

Low Threshold ◽

Theory And Experiment

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Lead-tin telluride double-heterojunction laser diodes: Theory and experiment

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1975.1068639 ◽

1975 ◽

Vol 11 (7) ◽

pp. 384-390 ◽

Cited By ~ 28

Author(s):

L. Tomasetta ◽

C. Fonstad

Keyword(s):

Laser Diodes ◽

Tin Telluride ◽

Lead Tin Telluride ◽

Double Heterojunction ◽

Theory And Experiment

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Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)

Applied Physics Letters ◽

10.1063/1.88410 ◽

1975 ◽

Vol 27 (4) ◽

pp. 245-247 ◽

Cited By ~ 43

Author(s):

W. R. Hitchens ◽

N. Holonyak ◽

P. D. Wright ◽

J. J. Coleman

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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Low Threshold GaAs Laser Diodes

IETE Journal of Research ◽

10.1080/03772063.1967.11485459 ◽

1967 ◽

Vol 13 (5) ◽

pp. 196-200

Author(s):

P. Parikh

Keyword(s):

Laser Diodes ◽

Gaas Laser ◽

Low Threshold

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1/fnoise in double‐heterojunction AlGaAs/GaAs laser diodes on GaAs and on Si substrates

Journal of Applied Physics ◽

10.1063/1.346247 ◽

1990 ◽

Vol 68 (8) ◽

pp. 4087-4090 ◽

Cited By ~ 4

Author(s):

R. Z. Fang ◽

A. D. van Rheenen ◽

A. van der Ziel ◽

A. C. Young ◽

J. P. van der Ziel

Keyword(s):

Laser Diodes ◽

Si Substrates ◽

Double Heterojunction ◽

Gaas Laser

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Very low threshold double heterojunction laser diodes of (AlGa)As

10.1109/iedm.1975.188929 ◽

1975 ◽

Author(s):

M. Ettenberg ◽

H. Kressel

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1975.18282 ◽

1975 ◽

Vol 22 (11) ◽

pp. 1056-1057 ◽

Cited By ~ 2

Author(s):

W.R. Hitchens ◽

N. Holonyak ◽

P.D. Wright ◽

J.J. Coleman

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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Low threshold current operation of 1.3 μm GaInNAs/GaAs laser diodes

LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) ◽

10.1109/leos.2000.890706 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Illek ◽

B. Borchert ◽

A.Y. Egorov ◽

H. Riechert

Keyword(s):

Laser Diodes ◽

Threshold Current ◽

Gaas Laser ◽

Low Threshold ◽

Current Operation

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Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Electronics Letters ◽

10.1049/el:19890738 ◽

1989 ◽

Vol 25 (16) ◽

pp. 1103 ◽

Cited By ~ 26

Author(s):

R.W. Glew ◽

B. Garrett ◽

P.D. Greene

Keyword(s):

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold

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Wavelength tuning of InGaAs/GaAs laser diodes by the application of high hydrostatic pressure

Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551) ◽

10.1109/icton.2002.1007861 ◽

2003 ◽

Author(s):

F. Dybala ◽

P. Adamiec ◽

A. Bercha ◽

W. Trzeciakowski

Keyword(s):

Hydrostatic Pressure ◽

High Hydrostatic Pressure ◽

Laser Diodes ◽

Wavelength Tuning ◽

Gaas Laser

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Erratum: Low‐threshold double‐heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Lead-tin telluride double-heterojunction laser diodes: Theory and experiment

Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)

Low Threshold GaAs Laser Diodes

1/fnoise in double‐heterojunction AlGaAs/GaAs laser diodes on GaAs and on Si substrates

Very low threshold double heterojunction laser diodes of (AlGa)As

IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J &lt; 104A/cm2, λ ≈ 5850 Å, 77°K)

Low threshold current operation of 1.3 μm GaInNAs/GaAs laser diodes

Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Wavelength tuning of InGaAs/GaAs laser diodes by the application of high hydrostatic pressure

IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K)