Low threshold current operation of 1.3 μm GaInNAs/GaAs laser diodes

LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) ◽

10.1109/leos.2000.890706 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Illek ◽

B. Borchert ◽

A.Y. Egorov ◽

H. Riechert

Keyword(s):

Laser Diodes ◽

Threshold Current ◽

Gaas Laser ◽

Low Threshold ◽

Current Operation

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High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3309 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3309-3312 ◽

Cited By ~ 4

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Very Low Threshold Current Operation of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l643 ◽

2003 ◽

Vol 42 (Part 2, No. 6B) ◽

pp. L643-L645 ◽

Cited By ~ 1

Author(s):

Ming-Yuan Wu ◽

Chi-Da Yang ◽

Po-Hsun Lei ◽

Meng-Chyi Wu ◽

Wen-Jeng Ho

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes

Applied Physics Letters ◽

10.1063/1.105723 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3351-3353 ◽

Cited By ~ 35

Author(s):

T. Katsuyama ◽

I. Yoshida ◽

J. Shinkai ◽

J. Hashimoto ◽

H. Hayashi

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Visible Laser ◽

Low Threshold ◽

Current Operation

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Low threshold current operation of 1.3 μm BH laser diodes with self-defined AlInAs-oxide current-confinement layer

LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) ◽

10.1109/leos.2000.890708 ◽

2002 ◽

Author(s):

Hyun-Chul Ko ◽

T. Nakamura ◽

T. Koui ◽

N. Suzuki ◽

T. Terakado ◽

...

Keyword(s):

Laser Diodes ◽

Threshold Current ◽

Current Confinement ◽

Low Threshold ◽

Current Operation

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High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes

Solid-State Electronics ◽

10.1016/s0038-1101(02)00171-5 ◽

2002 ◽

Vol 46 (12) ◽

pp. 2041-2044 ◽

Cited By ~ 6

Author(s):

Po-Hsun Lei ◽

Ming-Yuan Wu ◽

Chia-Chien Lin ◽

Wen-Jeng Ho ◽

Meng-Chyi Wu

Keyword(s):

Quantum Well ◽

High Power ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Extremely low threshold current operation in 1.5- mu m MQW-DFB laser diodes with semi-insulating InP current blocking region

Journal of Lightwave Technology ◽

10.1109/50.59163 ◽

1990 ◽

Vol 8 (9) ◽

pp. 1343-1349 ◽

Cited By ~ 13

Author(s):

T. Sasaki ◽

H. Yamazaki ◽

N. Henmi ◽

H. Yamada ◽

M. Yamaguchi ◽

...

Keyword(s):

Laser Diodes ◽

Threshold Current ◽

Dfb Laser ◽

Low Threshold ◽

Current Operation ◽

Current Blocking

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High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multiple quantum well laser diodes emitting at 676 nm

Electronics Letters ◽

10.1049/el:19940356 ◽

1994 ◽

Vol 30 (6) ◽

pp. 494-495 ◽

Cited By ~ 1

Author(s):

J.-F. Lin ◽

M.-C. Wu ◽

C.-M. Chang ◽

T.-P. Chen ◽

S.-W. Luh ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Electronics Letters ◽

10.1049/el:19890738 ◽

1989 ◽

Vol 25 (16) ◽

pp. 1103 ◽

Cited By ~ 26

Author(s):

R.W. Glew ◽

B. Garrett ◽

P.D. Greene

Keyword(s):

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold

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Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

Optics Express ◽

10.1364/oe.20.022181 ◽

2012 ◽

Vol 20 (20) ◽

pp. 22181 ◽

Cited By ~ 119

Author(s):

Andrew Lee ◽

Qi Jiang ◽

Mingchu Tang ◽

Alwyn Seeds ◽

Huiyun Liu

Keyword(s):

Quantum Dot ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Si Substrate ◽

Quantum Dot Laser ◽

Low Threshold ◽

Current Densities ◽

Gaas Quantum Dot

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Low threshold current density 1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition

Electronics Letters ◽

10.1049/el:19910660 ◽

1991 ◽

Vol 27 (12) ◽

pp. 1063 ◽

Cited By ~ 15

Author(s):

A. Kasukawa ◽

R. Bhat ◽

C.E. Zah ◽

S.A. Schwarz ◽

D.M. Hwang ◽

...

Keyword(s):

Vapour Deposition ◽

Laser Diodes ◽

Chemical Vapour ◽

Threshold Current ◽

Threshold Current Density ◽

Organic Chemical ◽

Graded Index ◽

Quantum Well Laser ◽

Metal Organic ◽

Low Threshold

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