1/fnoise in double‐heterojunction AlGaAs/GaAs laser diodes on GaAs and on Si substrates

1990 ◽  
Vol 68 (8) ◽  
pp. 4087-4090 ◽  
Author(s):  
R. Z. Fang ◽  
A. D. van Rheenen ◽  
A. van der Ziel ◽  
A. C. Young ◽  
J. P. van der Ziel
Keyword(s):  
Laser Diodes ◽  
Si Substrates ◽  
Double Heterojunction ◽  
Gaas Laser

Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

1995 ◽  
Vol 67 (20) ◽  
pp. 2995-2997 ◽  
Author(s):  
T. Egawa ◽  
Y. Hasegawa ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Degradation Mechanism ◽  
Laser Diodes ◽  
Si Substrates ◽  
Gaas Laser

Bulk changes during catastrophic degradation of GaAs laser diodes

1970 ◽  
Vol 1 (2) ◽  
pp. 279-282 ◽  
Author(s):  
H. R. Wittmann ◽  
J. L. Smith
Keyword(s):  
Laser Diodes ◽  
Gaas Laser

AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1552-1555 ◽  
Author(s):  
Takashi Egawa ◽  
Akira Ogawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Laser Diodes ◽  
Active Regions ◽  
Droplet Epitaxy ◽  
Gaas Laser

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser
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