Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)

W. R. Hitchens; N. Holonyak; P. D. Wright; J. J. Coleman

doi:10.1063/1.88410

Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)

Applied Physics Letters ◽

10.1063/1.88410 ◽

1975 ◽

Vol 27 (4) ◽

pp. 245-247 ◽

Cited By ~ 43

Author(s):

W. R. Hitchens ◽

N. Holonyak ◽

P. D. Wright ◽

J. J. Coleman

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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Very low threshold double heterojunction laser diodes of (AlGa)As

10.1109/iedm.1975.188929 ◽

1975 ◽

Author(s):

M. Ettenberg ◽

H. Kressel

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1975.18282 ◽

1975 ◽

Vol 22 (11) ◽

pp. 1056-1057 ◽

Cited By ~ 2

Author(s):

W.R. Hitchens ◽

N. Holonyak ◽

P.D. Wright ◽

J.J. Coleman

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Low Threshold

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Erratum: Low‐threshold double‐heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Journal of Applied Physics ◽

10.1063/1.325567 ◽

1978 ◽

Vol 49 (11) ◽

pp. 5688-5688

Author(s):

H. Kressel ◽

M. Ettenberg

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Gaas Laser ◽

Low Threshold ◽

Theory And Experiment

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Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Journal of Applied Physics ◽

10.1063/1.323150 ◽

1976 ◽

Vol 47 (8) ◽

pp. 3533-3537 ◽

Cited By ~ 74

Author(s):

H. Kressel ◽

M. Ettenberg

Keyword(s):

Laser Diodes ◽

Double Heterojunction ◽

Gaas Laser ◽

Low Threshold ◽

Theory And Experiment

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Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Electronics Letters ◽

10.1049/el:19890738 ◽

1989 ◽

Vol 25 (16) ◽

pp. 1103 ◽

Cited By ~ 26

Author(s):

R.W. Glew ◽

B. Garrett ◽

P.D. Greene

Keyword(s):

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold

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Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

Journal of Applied Physics ◽

10.1063/1.329846 ◽

1981 ◽

Vol 52 (6) ◽

pp. 3840-3844 ◽

Cited By ~ 14

Author(s):

D. Botez ◽

J. C. Connolly ◽

D. B. Gilbert ◽

M. Ettenberg

Keyword(s):

Temperature Sensitivity ◽

Threshold Current ◽

Double Heterojunction ◽

Low Threshold

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Low-threshold dye laser pumped by visible laser diodes

IEEE Photonics Technology Letters ◽

10.1109/68.248412 ◽

1993 ◽

Vol 5 (10) ◽

pp. 1156-1158 ◽

Cited By ~ 6

Author(s):

R. Scheps

Keyword(s):

Laser Diodes ◽

Dye Laser ◽

Visible Laser ◽

Low Threshold

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High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3309 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3309-3312 ◽

Cited By ~ 4

Author(s):

Chia-Chien Lin ◽

Kuo-Shung Liu ◽

Meng-Chyi Wu ◽

Hung-Pin Shiao

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Threshold Current ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Operation ◽

Multiple Quantum Well Laser

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Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

Optics Express ◽

10.1364/oe.20.022181 ◽

2012 ◽

Vol 20 (20) ◽

pp. 22181 ◽

Cited By ~ 119

Author(s):

Andrew Lee ◽

Qi Jiang ◽

Mingchu Tang ◽

Alwyn Seeds ◽

Huiyun Liu

Keyword(s):

Quantum Dot ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Si Substrate ◽

Quantum Dot Laser ◽

Low Threshold ◽

Current Densities ◽

Gaas Quantum Dot

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High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.99992 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1248-1250 ◽

Cited By ~ 8

Author(s):

Jae‐Hoon Kim ◽

Akbar Nouhi ◽

Gouri Radhakrishnan ◽

John K. Liu ◽

Robert J. Lang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Peak Power ◽

Molecular Beam ◽

Laser Diodes ◽

High Peak ◽

High Peak Power ◽

Si Substrates ◽

Low Threshold ◽

Stripe Laser

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Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)

Very low threshold double heterojunction laser diodes of (AlGa)As

IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J &lt; 104A/cm2, λ ≈ 5850 Å, 77°K)

Erratum: Low‐threshold double‐heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment

Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

Low-threshold dye laser pumped by visible laser diodes

High-Temperature and Low-Threshold-Current Operation of 1.5 µm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K)