Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 106 (9) ◽  
pp. 093704 ◽  
Author(s):  
M. E. White ◽  
O. Bierwagen ◽  
M. Y. Tsai ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Electron Transport Properties

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Thin Films of Prussian Blue: Sequential Assembly, Patterning and Electron Transport Properties at the Nanometric Scale

2010 ◽  
Vol 10 (8) ◽  
pp. 5042-5050 ◽  
Author(s):  
Saioa Cobo ◽  
Gábor Molnár ◽  
Franck Carcenac ◽  
Petra Á Szilágyi ◽  
Lionel Salmon ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Transport Properties ◽  
Prussian Blue ◽  
Electron Transport Properties ◽  
Sequential Assembly

Electron transport properties of some new 4-tert-butylcalix[4]arene derivatives in thin films

2012 ◽  
Vol 135 (1) ◽  
pp. 123-129 ◽  
Author(s):  
Liviu Leontie ◽  
Ramona Danac ◽  
Mihaela Girtan ◽  
Aurelian Carlescu ◽  
Alicia Petronela Rambu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Transport Properties ◽  
Electron Transport Properties

scholarly journals Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy

2021 ◽  
Vol 39 (6) ◽  
pp. 063407
Author(s):  
Niraj Bhattarai ◽  
Andrew W. Forbes ◽  
Christopher Gassen ◽  
Raghad S. H. Saqat ◽  
Ian L. Pegg ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Weyl Semimetal
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