Temperature dependence of buried channel ion sensitive field effect transistors

2009 ◽  
Vol 106 (9) ◽  
pp. 094501 ◽  
Author(s):  
Roman Novitski ◽  
Hila Einati ◽  
Yosi Shacham-Diamand
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Buried Channel

Temperature Dependence of Charge Transport in Polythiophene-Based Field-Effect Transistors

2010 ◽  
Author(s):  
M. Yoshikawa ◽  
T. Banno ◽  
T. Nagase ◽  
T. Kobayashi ◽  
S. Murakami ◽  
...  
Keyword(s):  
Charge Transport ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

2006 ◽  
Vol 74 (23) ◽  
Author(s):  
Yukinori Ono ◽  
Jean-Francois Morizur ◽  
Katsuhiko Nishiguchi ◽  
Kei Takashina ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
Buried Channel ◽  
Impurity Conduction ◽  
Phosphorus Doped

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 ◽  
Vol 103 (12) ◽  
pp. 123511 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Takafumi Kamimura ◽  
Man Hoi Wong ◽  
Daivasigamani Krishnamurthy ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Temperature dependence of polymer field effect transistors

1991 ◽  
Vol 41 (3) ◽  
pp. 1185-1188 ◽  
Author(s):  
K.F. Voss ◽  
D. Braun ◽  
A.J. Heeger
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors
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