Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition

2009 ◽  
Vol 95 (14) ◽  
pp. 144107 ◽  
Author(s):  
Navneet Kumar ◽  
Angel Yanguas-Gil ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Low-temperature Si in-situ cleaning and homoepitaxy by remote plasma-enhanced chemical vapor deposition

1990 ◽  
Author(s):  
Ting-Chen Hsu ◽  
Brian G. Anthony ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

1997 ◽  
Vol 482 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Dong-Jun Kim ◽  
Jong-Sik Paek ◽  
Je-Hee Jo ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Nucleation Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractThis study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

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