Energy and spatial distribution of an electron trapping center in the MOS insulator

1977 ◽  
Vol 48 (2) ◽  
pp. 739-749 ◽  
Author(s):  
V. J. Kapoor ◽  
F. J. Feigl ◽  
S. R. Butler
Keyword(s):  
Spatial Distribution ◽  
Electron Trapping ◽  
Trapping Center ◽  
Electron Trapping Center

Evidence of Electron Trapping Center at Pentacene/SiO2 Interface

2007 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Electron Trapping ◽  
Trapping Center ◽  
Electron Trapping Center

Electron trapping center and SnO2-doping mechanism of indium tin oxide

2000 ◽  
Vol 71 (6) ◽  
pp. 609-614 ◽  
Author(s):  
T. Omata ◽  
H. Fujiwara ◽  
S. Otsuka-Yao-Matsuo ◽  
N. Ono
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electron Trapping ◽  
Trapping Center ◽  
Doping Mechanism ◽  
Electron Trapping Center

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 689-692 ◽  
Author(s):  
K.Y. Cheong ◽  
Wook Bahng ◽  
Nam Kyun Kim
Keyword(s):  
Nitrous Oxide ◽  
Breakdown Strength ◽  
Gate Oxide ◽  
Electron Trapping ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Charge ◽  
Oxide Breakdown ◽  
First Time ◽  
Electron Trapping Center

In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.

Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction

2020 ◽  
Vol 4 (11) ◽  
pp. 3234-3239
Author(s):  
Qiaohong Zhu ◽  
Zehong Xu ◽  
Qiuying Yi ◽  
Muhammad Nasir ◽  
Mingyang Xing ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photocatalytic Performance ◽  
Electron Trapping ◽  
Electron Lifetime ◽  
Phosphorus Doping ◽  
Sulfur Vacancy ◽  
Effective Electron ◽  
Dopant Atoms ◽  
Vacancy Level ◽  
Electron Trapping Center

Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.

Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
P.N. Grillot ◽  
S.A. Ringel ◽  
G.P. Watsona ◽  
E.A. Fitzgerald ◽  
Y.H. Xie
Keyword(s):  
Peak Height ◽  
Trapping Center ◽  
Applied Bias ◽  
Recombination Activity ◽  
Hole Trapping ◽  
Trapping Centers ◽  
Germanium Silicon ◽  
Silicon Silicon ◽  
Electron Trapping Center

AbstractCarrier trapping and recombination activity have been studied with DLTS and EBIC in RTCVD grown compositionally graded Ge0.3Si0.7/Si heterostructures. DLTS peak height is found to vary with applied bias, and the bias conditions used indicate that at least one peak is present in the homoepitaxial Si buffer layer and perhaps the substrate as well. Variations in EBIC contrast as a function of reverse bias, and DLTS fill pulse experiments both indicate that the DLTS peaks observed are dislocation related. Moreover, the bias dependent decrease in DLTS peak height is observed to occur at different rates for different peaks, indicating a possible connection between certain DLTS peaks and dislocation orientation or type. Activation energies of one electron trapping center and one hole trapping center add up to roughly the expected bandgap in a relaxed GexSi1−x, alloy with x ≦ 0.3, indicating that the electron and hole trapping centers observed with DLTS may, in fact, be associated with the R-G center observed by EBIC.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

SEM evaluation of the TEM cold-stage double-film specimen

1984 ◽  
Vol 42 ◽  
pp. 272-273
Author(s):  
Jayesh Bellare
Keyword(s):  
Spatial Distribution ◽  
Sample Preparation ◽  
Sample Thickness ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Liquid Sample ◽  
Thin Specimen ◽  
Sample Preparation Technique ◽  
Cold Stage ◽  
Film Specimen

Seeing is believing, but only after the sample preparation technique has received a systematic study and a full record is made of the treatment the sample gets.For microstructured liquids and suspensions, fast-freeze thermal fixation and cold-stage microscopy is perhaps the least artifact-laden technique. In the double-film specimen preparation technique, a layer of liquid sample is trapped between 100- and 400-mesh polymer (polyimide, PI) coated grids. Blotting against filter paper drains excess liquid and provides a thin specimen, which is fast-frozen by plunging into liquid nitrogen. This frozen sandwich (Fig. 1) is mounted in a cooling holder and viewed in TEM.Though extremely promising for visualization of liquid microstructures, this double-film technique suffers from a) ireproducibility and nonuniformity of sample thickness, b) low yield of imageable grid squares and c) nonuniform spatial distribution of particulates, which results in fewer being imaged.

Macroprobe Mode for the Study of Segregation in Steels

1990 ◽  
Vol 48 (2) ◽  
pp. 260-261
Author(s):  
Auclair Gilles ◽  
Benoit Danièle
Keyword(s):  
Mechanical Properties ◽  
Spatial Distribution ◽  
High Performance ◽  
Volume Fraction ◽  
Sheet Steel ◽  
Acquisition Time ◽  
Chemical Information ◽  
X Ray ◽  
Accurate Quantitative Analysis ◽  
Optical Micrographs

During these last 10 years, high performance correction procedures have been developed for classical EPMA, and it is nowadays possible to obtain accurate quantitative analysis even for soft X-ray radiations. It is also possible to perform EPMA by adapting this accurate quantitative procedures to unusual applications such as the measurement of the segregation on wide areas in as-cast and sheet steel products.The main objection for analysis of segregation in steel by means of a line-scan mode is that it requires a very heavy sampling plan to make sure that the most significant points are analyzed. Moreover only local chemical information is obtained whereas mechanical properties are also dependant on the volume fraction and the spatial distribution of highly segregated zones. For these reasons we have chosen to systematically acquire X-ray calibrated mappings which give pictures similar to optical micrographs. Although mapping requires lengthy acquisition time there is a corresponding increase in the information given by image anlysis.

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