Electroreflectance measurements of lattice damage in ion implanted GaAs

1976 ◽  
Vol 47 (7) ◽  
pp. 3094-3098 ◽  
Author(s):  
Wayne J. Anderson ◽  
Y. S. Park
Keyword(s):  
Lattice Damage ◽  
Ion Implanted

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)

2018 ◽  
Vol 1 (2) ◽  
pp. 1870021 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Refractive index change in ion-implanted LiNbO3 waveguides calculated from lattice damage ratio

2010 ◽  
Vol 108 (9) ◽  
pp. 093103 ◽  
Author(s):  
Qing Huang ◽  
Jin-Hua Zhao ◽  
Peng Liu ◽  
Jing Guan ◽  
Xue-Lin Wang
Keyword(s):  
Refractive Index ◽  
Refractive Index Change ◽  
Index Change ◽  
Lattice Damage ◽  
Ion Implanted

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon

2018 ◽  
Vol 1 (2) ◽  
pp. 1800038 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

Annealing of lattice damage in ion implanted silicon

1980 ◽  
Vol 49 (1-3) ◽  
pp. 133-136 ◽  
Author(s):  
V. D. Tkachev ◽  
C. Schrödel ◽  
A. V. Mudryi
Keyword(s):  
Lattice Damage ◽  
Ion Implanted

Sem and Aes Analysis of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
M. Shayegan ◽  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Surface Damage ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Lattice Damage ◽  
Implantation Profile ◽  
Ion Implanted

ABSTRACTIon-implantation of graphite is characterized with respect to lattice damage and the distribution of implanted ions. Both the depth profile of the implanted ions and of the lattice damage are shown to follow the models previously developed for ion-implanted semiconductors. Auger electron spectroscopy (AES) is used to monitor the implantation profile. The surface damage is examined by scanning electron microscopy (SEM) while microcrystalline regions in an amorphous background are observed by scanning transmission electron microscopy (STEM).

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