Grain‐boundary electrotransport of liquid zones in thin metal films

1975 ◽  
Vol 46 (5) ◽  
pp. 1910-1918 ◽  
Author(s):  
J. K. Howard
Keyword(s):  
Grain Boundary ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Crack-like grain-boundary diffusion wedges in thin metal films

1999 ◽  
Vol 47 (10) ◽  
pp. 2865-2878 ◽  
Author(s):  
H. Gao ◽  
L. Zhang ◽  
W.D. Nix ◽  
C.V. Thompson ◽  
E. Arzt
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Metal Films ◽  
Grain Boundary Diffusion ◽  
Thin Metal ◽  
Thin Metal Films

Dislocation–grain boundary interaction in 〈111〉 textured thin metal films

2010 ◽  
Vol 58 (16) ◽  
pp. 5232-5241 ◽  
Author(s):  
D.V. Bachurin ◽  
D. Weygand ◽  
P. Gumbsch
Keyword(s):  
Grain Boundary ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Boundary Interaction

The Improvement of Immunity to Electromigration by Means of Microstructural Design

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Metal Films ◽  
Thin Metal ◽  
The Self ◽  
Thin Metal Films ◽  
Deposition Technique ◽  
Aluminum Films ◽  
Microstructural Design

AbstractIt is known from literature that the properties of thin films greatly depend on their structuare. Therefore, the microstructural design is attractive for control over the properties of thin metal films used for interconnect metallization.In this paper we discuss the potentialities of the self-ion assisted deposition technique for control over the grain and grain boundary structures of thin metal films and their properties such as resistivity and immunity to electromigration.It was found that resistivity of aluminum films deposited at the 6 kV bias was virtually equal to resistivity of bulk aluminum. Films deposited at the less bias or without it had higher resistivities. Abnormal grain growth was found in 6 kV-films. In films prepared without bias normal grain growth proceeds.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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