Young’s modulus measurements and grain boundary sliding in free-standing thin metal films

2001 ◽  
Vol 78 (18) ◽  
pp. 2673-2675 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen
Keyword(s):  
Grain Boundary ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Grain Boundary Sliding ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Free Standing ◽  
Boundary Sliding

Crack-like grain-boundary diffusion wedges in thin metal films

1999 ◽  
Vol 47 (10) ◽  
pp. 2865-2878 ◽  
Author(s):  
H. Gao ◽  
L. Zhang ◽  
W.D. Nix ◽  
C.V. Thompson ◽  
E. Arzt
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Metal Films ◽  
Grain Boundary Diffusion ◽  
Thin Metal ◽  
Thin Metal Films

Atomistic Analysis of Nano-Scale Crystal Plasticity in Thin Metal Films

2004 ◽  
Vol 20 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Y.-L. Shen ◽  
R. W. Leger
Keyword(s):  
Plastic Deformation ◽  
Mechanical Response ◽  
Metal Films ◽  
Thin Metal ◽  
Tensile Fracture ◽  
Thin Metal Films ◽  
Free Standing ◽  
Nano Scale ◽  
Plastic Deformation Behavior ◽  
Defect Interactions

ABSTRACTNumerical simulations based on molecular statics are carried out to study nano-scale plastic deformation behavior in thin metal films. Particular attention is devoted to correlating the overall mechanical response and the underlying crystal defect mechanisms during mechanical loading. The simulations are within the two-dimensional framework involving pair molecular interactions in singlecrystal materials. Special modeling features are utilized for studying the formation of dislocations, interface characteristics, and defect interactions. Specific problems investigated in this work include: plastic deformation and tensile fracture in a free-standing film, interface-constrained plasticity in substrate-bonded films, and homogeneous nucleation of dislocations during nanoindentation.

Dislocation–grain boundary interaction in 〈111〉 textured thin metal films

2010 ◽  
Vol 58 (16) ◽  
pp. 5232-5241 ◽  
Author(s):  
D.V. Bachurin ◽  
D. Weygand ◽  
P. Gumbsch
Keyword(s):  
Grain Boundary ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Boundary Interaction

The Improvement of Immunity to Electromigration by Means of Microstructural Design

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Metal Films ◽  
Thin Metal ◽  
The Self ◽  
Thin Metal Films ◽  
Deposition Technique ◽  
Aluminum Films ◽  
Microstructural Design

AbstractIt is known from literature that the properties of thin films greatly depend on their structuare. Therefore, the microstructural design is attractive for control over the properties of thin metal films used for interconnect metallization.In this paper we discuss the potentialities of the self-ion assisted deposition technique for control over the grain and grain boundary structures of thin metal films and their properties such as resistivity and immunity to electromigration.It was found that resistivity of aluminum films deposited at the 6 kV bias was virtually equal to resistivity of bulk aluminum. Films deposited at the less bias or without it had higher resistivities. Abnormal grain growth was found in 6 kV-films. In films prepared without bias normal grain growth proceeds.

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