A Very Simple Low Noise Voltage Preamplifier For High Sensitivity Noise Measurements

2009 ◽  
Author(s):  
G. Cannatà ◽  
G. Scandurra ◽  
C. Ciofi ◽  
Massimo Macucci ◽  
Giovanni Basso
Keyword(s):  
High Sensitivity ◽  
Low Noise ◽  
Noise Voltage ◽  
Noise Measurements

scholarly journals Science Highlights and Final Updates from 17 Years of Total Solar Irradiance Measurements from the SOlar Radiation and Climate Experiment/Total Irradiance Monitor (SORCE/TIM)

Solar Physics ◽  
2021 ◽  
Vol 296 (9) ◽  
Author(s):  
Greg Kopp
Keyword(s):  
Solar Radiation ◽  
Solar Irradiance ◽  
High Sensitivity ◽  
Total Solar Irradiance ◽  
Low Noise ◽  
Final Data ◽  
Total Irradiance ◽  
Noise Measurements ◽  
Irradiance Data ◽  
Measurement Record

AbstractThe final version (V.19) of the total solar irradiance data from the SOlar Radiation and Climate Experiment (SORCE) Total Irradiance Monitor has been released. This version includes all calibrations updated to the end of the mission and provides irradiance data from 25 February 2003 through 25 February 2020. These final calibrations are presented along with the resulting final data products. An overview of the on-orbit operations timeline is provided as well as the associated changes in the time-dependent uncertainties. Scientific highlights from the instrument are also presented. These include the establishment of a new, lower TSI value; accuracy improvements to other TSI instruments via a new calibration facility; the lowest on-orbit noise (for high sensitivity to solar variability) of any TSI instrument; the best inherent stability of any on-orbit TSI instrument; a lengthy (17-year) measurement record benefitting from these stable, low-noise measurements; the first reported detection of a solar flare in TSI; and observations of two Venus transits and four Mercury transits.

A VERY LOW NOISE, HIGH STABILITY, VOLTAGE REFERENCE FOR HIGH SENSITIVITY NOISE MEASUREMENTS

2007 ◽  
Vol 07 (03) ◽  
pp. L231-L238 ◽  
Author(s):  
C. CIOFI ◽  
G. CANNATÀ' ◽  
G. SCANDURRA ◽  
R. MERLINO
Keyword(s):  
High Stability ◽  
Voltage Drop ◽  
Large Fraction ◽  
High Sensitivity ◽  
Low Noise ◽  
Voltage Source ◽  
Voltage Reference ◽  
Forward Region ◽  
Linear Characteristic ◽  
Noise Measurements

In this paper we demonstrate that by exploiting the non linear characteristic of low noise PN junction diodes, a very low noise, high stability voltage reference can be obtained starting from a conventional solid state series voltage reference. In order to obtain such a result, a series connection of N identical diodes is supplied in the forward region of the I-V characteristic by means of a proper resistance. While the DC voltage drop across the diodes can be a large fraction of the voltage supplied by the reference, the noise introduced by the reference itself is reduced by a much larger factor because of the low value of the small signal equivalent resistance of the diodes. In its simplest implementation, such a voltage source would suffer from a relatively high temperature dependence of the supplied voltages because of the intrinsic properties of PN junctions. However, by resorting to a proper temperature control circuit, high stability can be obtained. As an example, by employing an AD586 voltage reference and with N = 4, a 2.560 V reference has been obtained with a stability over temperature better that 50 μ V /° C and a voltage noise as low as 2 × 10−15, 6 × 10−17 and 1.5 × 10−17 V 2/ Hz at 100 mHz, 1 Hz and for frequencies larger than 10 Hz, respectively.

DEDICATED INSTRUMENTATION FOR HIGH SENSITIVITY, LOW FREQUENCY NOISE MEASUREMENT SYSTEMS

2004 ◽  
Vol 04 (02) ◽  
pp. L385-L402 ◽  
Author(s):  
C. CIOFI ◽  
G. GIUSI ◽  
G. SCANDURRA ◽  
B. NERI
Keyword(s):  
Background Noise ◽  
Flicker Noise ◽  
Low Frequency ◽  
High Sensitivity ◽  
Design Guidelines ◽  
Low Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Noise Measurements

Low Frequency Noise Measurements (LFNM) can be used as very sensitive tool for the characterization of the quality and the reliability of electron devices. However, especially in those cases in which the frequency range of interest extends below 1 Hz, instrumentation with an acceptable low level of background noise is not easily found on the market. In fact, at very low frequencies, the flicker noise introduced by the electronic components which make up the instrumentation becomes predominant and several interesting phenomena which could be detected by means of LFNM may result completely hidden in the background noise. This consideration is not limited to the case of input preamplifiers but does extend to any piece of instrumentation that contributes to the LFNM systems, and in particular to the power supplies used for biasing the Device Under Test. During the last few years, our research groups have been strongly involved in the design of very low noise instrumentation for application in the field of LFNM. In this work we report the main results which we have obtained together with a discussion of the design guidelines that have allowed us, in a few cases, to reach noise levels not to be equalled by any instrumentation available on the market.

New Method to Determine the a-Si:H Pin Diode Series Resistance by Noise Measurements

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Hillebrand ◽  
M. Böhm
Keyword(s):  
Series Resistance ◽  
Partial Information ◽  
Low Noise ◽  
Operating Conditions ◽  
New Method ◽  
Measuring System ◽  
Pin Diode ◽  
Noise Current ◽  
Current Voltage ◽  
Noise Measurements

ABSTRACTThe series resistance limits the linearity of photodiodes and decreases the efficiency of solar cells. It is usually determined from IV-measurements for moderate and high forward current density. This method, however, provides only partial information about Rs, since the series resistance depends on the operating point. An alternative method is based on noise measurements. System noise of the measuring system with a low-noise current-voltage converter has been investigated. A new method for extraction of photodiode series resistance from noise measurements is suggested. Noise measurements are carried out for a-Si:H pin diodes. The series resistance of an amorphous pin diode has been extracted for different operating conditions using the new measurement method.

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