New Method to Determine the a-Si:H Pin Diode Series Resistance by Noise Measurements

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Hillebrand ◽  
M. Böhm
Keyword(s):  
Series Resistance ◽  
Partial Information ◽  
Low Noise ◽  
Operating Conditions ◽  
New Method ◽  
Measuring System ◽  
Pin Diode ◽  
Noise Current ◽  
Current Voltage ◽  
Noise Measurements

ABSTRACTThe series resistance limits the linearity of photodiodes and decreases the efficiency of solar cells. It is usually determined from IV-measurements for moderate and high forward current density. This method, however, provides only partial information about Rs, since the series resistance depends on the operating point. An alternative method is based on noise measurements. System noise of the measuring system with a low-noise current-voltage converter has been investigated. A new method for extraction of photodiode series resistance from noise measurements is suggested. Noise measurements are carried out for a-Si:H pin diodes. The series resistance of an amorphous pin diode has been extracted for different operating conditions using the new measurement method.

scholarly journals Correction Procedures for Temperature and Irradiance of Photovoltaic Modules: Determination of Series Resistance and Temperature Coefficients by Means of an Indoor Solar Flash Test Device

2021 ◽  
Vol 65 (2-4) ◽  
pp. 264-270
Author(s):  
Silvia Luciani ◽  
Gianluca Coccia ◽  
Sebastiano Tomassetti ◽  
Mariano Pierantozzi ◽  
Giovanni Di Nicola
Keyword(s):  
Series Resistance ◽  
Experimental Tests ◽  
Standard Test ◽  
Operating Conditions ◽  
Test Device ◽  
Solar Simulator ◽  
Photovoltaic Modules ◽  
Current Voltage ◽  
And Control

The comparison between I-V (current-voltage) curves measured on site and I-V curves declared by the manufacturer allows to detect decrease of performance and control the degradation of photovoltaic modules and strings. On site, I-V curves are usually obtained under operating conditions (OPCs), i.e. at variable solar radiation and module temperature. OPC curves must be translated into standard test conditions (STCs), at a global irradiance of 1000 W/m2 and a module temperature of 25 °C. The correction at STC conditions allows to estimate the deviation between the power of the examined module and the maximum power declared by the manufacturer. A possible translation procedure requires two correction parameters: Rs’, the internal series resistance, and k’, the corresponding temperature coefficient. The aim of this work is to determine the correction parameters carrying out specific experimental tests as indicated by IEC 60891. A set of brand-new photovoltaic modules was experimentally characterized determining their I-V curves by means of an indoor solar flash test device based on a class A+ AM 1.5 solar simulator. Using the OPC I-V curves, obtained at several conditions of irradiance and temperature, it was possible to determine the correction parameters of the photovoltaic modules being considered.

A NEW TECHNIQUE FOR EXTRACTING THE MOSFET THRESHOLD VOLTAGE USING NOISE MEASUREMENTS

2004 ◽  
Vol 04 (04) ◽  
pp. L643-L649 ◽  
Author(s):  
G. GIUSI ◽  
N. DONATO ◽  
C. CIOFI ◽  
F. CRUPI
Keyword(s):  
Threshold Voltage ◽  
Thermal Noise ◽  
New Method ◽  
New Technique ◽  
Mos Transistors ◽  
Mos Devices ◽  
Approximate Models ◽  
Current Voltage ◽  
Noise Measurements ◽  
A New Technique

In this work we propose a new technique for the evaluation of the threshold voltage of MOS transistors based on the measurement of the channel thermal noise. Since this new method allows the evaluation of the threshold voltage without any current flowing through the channel, it inherently eliminates the limitations coming from the need of using too approximate models for the interpretation of current-voltage measurements in MOS devices. The results of actual measurements on p-channel MOSFETs are reported that confirm the validity and the significance of the proposed approach.

The Cryogenic Testing and Characterisation of SiC Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 863-866 ◽  
Author(s):  
Peter M. Gammon ◽  
Craig A. Fisher ◽  
Vishal Ajit Shah ◽  
Mike R. Jennings ◽  
Amador Pérez-Tomás ◽  
...  
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Performance Testing ◽  
Pin Diode ◽  
Static Characteristics ◽  
Switching Circuit ◽  
Temperature Range ◽  
Switching Losses ◽  
Current Voltage ◽  
Cryogenic Testing

High-resolution cryogenic performance testing is carried out on 4H-SiC PiN and Schottky diodes. At 2K intervals from 20 to 320K, current-voltage tests are performed to extract static characteristics such as turn-on, ideality factor and barrier height from across the temperature range. We also analyse the performance of the diodes within a low current/voltage switching circuit across the same temperature range using an inductive switching setup. Both diodes suffer markedly increased conduction losses at the lower temperatures, the PiN diode losing all the benefits of conductivity modulation as dopant freezes-out, reducing its series resistance. However, minor gains in the total switching losses are expected at low temperature due to faster switching speeds.

Noise of a-Si:H Pin Diode Pixels in Imagers at Different Operating Conditions

1999 ◽  
Vol 557 ◽  
Author(s):  
F. Blecher ◽  
B. Schneider ◽  
J. Sterzel ◽  
M. Böhm
Keyword(s):  
Spectral Density ◽  
Dark Current ◽  
Dynamic Range ◽  
Flicker Noise ◽  
Signal To Noise Ratio ◽  
Operating Conditions ◽  
Integration Time ◽  
Pin Diode ◽  
Pin Diodes ◽  
Noise Current

AbstractThe noise current spectral density of an a-Si:H pin diode can be calculated with experimentally determined flicker noise coefficients by superposition of the shot and flicker noise spectra of photocurrent and dark current. The dependence of the flicker noise current spectral density in pin diodes on the pixel area is calculated with our expansion of Hooge's law for flicker noise. We propose a new method for the calculation of dynamic range (DR) and signal-to-noise ratio (SNR) in pin diode pixels as a function of pixel area, dark current, photocurrent and the integration time of the imager. DR and SNR of the pin diodes are calculated for Thin Film on ASIC (TFA) image sensors.

scholarly journals Measuring system for amperometric chemical sensors using the three-electrode technique for field application

2003 ◽  
Vol 1 (02) ◽  
Author(s):  
P.R. Hernández ◽  
C.A. Galán ◽  
A. Morales ◽  
S. Alegret
Keyword(s):  
Hydrogen Peroxide ◽  
Chemical Sensors ◽  
Low Cost ◽  
Low Noise ◽  
Field Application ◽  
Measuring System ◽  
Good Linearity ◽  
Noise Measurements ◽  
Electrode Technique ◽  
Commercial Equipment

A portable and low cost measuring system for amperometric chemical sensors using the three-electrode technique was developed. This technique allows chemical sensors to work with currents higher than ten microamperes. The system was based on a potentiostat operation, completed with an I-V converter and signal conditioning circuits. The instrument was evaluated comparing calibration curves of hydrogen peroxide, proving several amperometric chemical sensors and biosensors, to those obtained from a very expensive commercial equipment. Good linearity and sensibility as well as low noise measurements were obtained. Moreover, because the reduced size and low cost, the instrument allows to be used directly in field applications.

A new method of fluxgate signal extraction

2017 ◽  
Vol 2017 (45) ◽  
pp. 83-89
Author(s):  
A.A. Marusenkov ◽  
Keyword(s):  
High Frequency ◽  
Second Harmonic ◽  
Excitation Frequency ◽  
Low Noise ◽  
Measuring System ◽  
Signal Extraction ◽  
Fluxgate Magnetometer ◽  
New Approach ◽  
Average Value ◽  
The Time Domain

Using dedicated high-frequency measuring system the distribution of the Barkhausen jumps intensity along a reversal magnetization cycle was investigated for low noise fluxgate sensors of various core shapes. It is shown that Barkhausen (reversal magnetization) noise intensity is strongly inhomogeneous during an excitation cycle. In the traditional second harmonic fluxgate magnetometers the signals are extracted in the frequency domain, as a result, some average value of reversal magnetization noises is contributed to the output signals. In order to fit better the noise shape and minimize its transfer to the magnetometer output the new approach for demodulating signals of these sensors is proposed. The new demodulating method is based on information extraction in the time domain taking into account the statistical properties of cyclic reversal magnetization noises. This approach yields considerable reduction of the fluxgate magnetometer noise in comparison with demodulation of the signal filtered at the second harmonic of the excitation frequency.

All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

2011 ◽  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Flow ◽  
Series Resistance ◽  
Electrical Contacts ◽  
New Method ◽  
Contactless Measurement ◽  
Sample Handling ◽  
Imaging Methods ◽  
Lateral Current

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.

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