Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Ch. Walczyk; Ch. Wenger; R. Sohal; M. Lukosius; A. Fox; J. Dąbrowski; D. Wolansky; B. Tillack; H.-J. Müssig; T. Schroeder

doi:10.1063/1.3139282

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of Applied Physics ◽

10.1063/1.3139282 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114103 ◽

Cited By ~ 79

Author(s):

Ch. Walczyk ◽

Ch. Wenger ◽

R. Sohal ◽

M. Lukosius ◽

A. Fox ◽

...

Keyword(s):

Low Power ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Metal Insulator ◽

Metal Insulator Metal ◽

Memory Applications

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Low power and stable resistive switching in graphene oxide-based RRAM embedded with ZnO nanoparticles for nonvolatile memory applications

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-06287-6 ◽

2021 ◽

Author(s):

Rakesh Singh ◽

Ravi Kumar ◽

Anil Kumar ◽

Dinesh Kumar ◽

Mukesh Kumar

Keyword(s):

Graphene Oxide ◽

Low Power ◽

Resistive Switching ◽

Zno Nanoparticles ◽

Nonvolatile Memory ◽

Memory Applications

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Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

10.1063/1.5032708 ◽

2018 ◽

Author(s):

Rakesh Singh ◽

Ravi Kumar ◽

Anil Kumar ◽

Rajesh Kashyap ◽

Mukesh Kumar ◽

...

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Metal Structure ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Metal Insulator Metal ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

Journal of Electronic Materials ◽

10.1007/s11664-018-6105-0 ◽

2018 ◽

Vol 47 (9) ◽

pp. 4938-4943 ◽

Cited By ~ 1

Author(s):

S. Dueñas ◽

H. Castán ◽

H. García ◽

O. G. Ossorio ◽

L. A. Domínguez ◽

...

Keyword(s):

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Metal Insulator ◽

Metal Insulator Metal ◽

Memory Applications

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Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289784 ◽

2007 ◽

Author(s):

Lina Huang ◽

Bingjun Qu ◽

Litian Liu

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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The resistive switching characteristics in TaON films for nonvolatile memory applications

Thin Solid Films ◽

10.1016/j.tsf.2012.09.081 ◽

2013 ◽

Vol 528 ◽

pp. 224-228 ◽

Cited By ~ 11

Author(s):

Min-Chen Chen ◽

Ting-Chang Chang ◽

Yi-Chieh Chiu ◽

Shih-Cheng Chen ◽

Sheng-Yao Huang ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications

IEEE Electron Device Letters ◽

10.1109/led.2013.2272455 ◽

2013 ◽

Vol 34 (9) ◽

pp. 1145-1147 ◽

Cited By ~ 12

Author(s):

Somnath Mondal ◽

Ching-Hao Chueh ◽

Tung-Ming Pan

Keyword(s):

Low Power ◽

Nonvolatile Memory ◽

High Performance ◽

Memory Applications

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Bipolar resistive switching characteristics of silicon carbide nitride (SiCN)-based devices for nonvolatile memory applications

Ceramics International ◽

10.1016/j.ceramint.2017.04.037 ◽

2017 ◽

Vol 43 (12) ◽

pp. 8970-8974 ◽

Cited By ~ 9

Author(s):

Narendra Singh ◽

Kirandeep Singh ◽

Davinder Kaur

Keyword(s):

Silicon Carbide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Memory Applications

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Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4881720 ◽

2014 ◽

Vol 104 (22) ◽

pp. 223505 ◽

Cited By ~ 21

Author(s):

Y. J. Fu ◽

F. J. Xia ◽

Y. L. Jia ◽

C. J. Jia ◽

J. Y. Li ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Memory Applications

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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4742737 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052901 ◽

Cited By ~ 39

Author(s):

Yang-Shun Fan ◽

Po-Tsun Liu ◽

Li-Feng Teng ◽

Ching-Hui Hsu

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Zinc Tin Oxide ◽

Switching Characteristics ◽

Memory Applications

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Resistive switching effect in metal/insulator/metal heterostructures and its application for non-volatile memory

IEEJ Transactions on Electrical and Electronic Engineering ◽

10.1002/tee.20189 ◽

2007 ◽

Vol 2 (4) ◽

pp. 453-457 ◽

Cited By ~ 8

Author(s):

H. Akinaga ◽

H. Shima ◽

F. Takano ◽

I. H. Inoue ◽

H. Takagi

Keyword(s):

Resistive Switching ◽

Switching Effect ◽

Metal Insulator ◽

Metal Insulator Metal ◽

Non Volatile Memory ◽

Volatile Memory ◽

Resistive Switching Effect

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