Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

2018 ◽  
Author(s):  
Rakesh Singh ◽  
Ravi Kumar ◽  
Anil Kumar ◽  
Rajesh Kashyap ◽  
Mukesh Kumar ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Metal Structure ◽  
Bipolar Resistive Switching ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

2020 ◽  
Vol 849 ◽  
pp. 156699 ◽  
Author(s):  
M. Brzhezinskaya ◽  
O.O. Kapitanova ◽  
O.V. Kononenko ◽  
S. Koveshnikov ◽  
V. Korepanov ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Oxide Films ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications

IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550031 ◽  
Author(s):  
PRANAB KUMAR SARKAR ◽  
ASIM ROY
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Cell ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Switching Performance ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Compliance ◽  
Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

Resistive switching in high-k dielectrics for non-volatile memory applications

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
R.G. Elliman ◽  
M.N. Saleh ◽  
D.K. Venkatachalam ◽  
T-H. Kim ◽  
K. Belay ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

2015 ◽  
Vol 147 ◽  
pp. 37-40 ◽  
Author(s):  
R. Ortega-Hernandez ◽  
M. Coll ◽  
J. Gonzalez-Rosillo ◽  
A. Palau ◽  
X. Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications
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