Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Yang-Shun Fan; Po-Tsun Liu; Li-Feng Teng; Ching-Hui Hsu

doi:10.1063/1.4742737

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4742737 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052901 ◽

Cited By ~ 39

Author(s):

Yang-Shun Fan ◽

Po-Tsun Liu ◽

Li-Feng Teng ◽

Ching-Hui Hsu

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Zinc Tin Oxide ◽

Switching Characteristics ◽

Memory Applications

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Bipolar resistive switching characteristics of silicon carbide nitride (SiCN)-based devices for nonvolatile memory applications

Ceramics International ◽

10.1016/j.ceramint.2017.04.037 ◽

2017 ◽

Vol 43 (12) ◽

pp. 8970-8974 ◽

Cited By ~ 9

Author(s):

Narendra Singh ◽

Kirandeep Singh ◽

Davinder Kaur

Keyword(s):

Silicon Carbide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Memory Applications

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Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289784 ◽

2007 ◽

Author(s):

Lina Huang ◽

Bingjun Qu ◽

Litian Liu

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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The resistive switching characteristics in TaON films for nonvolatile memory applications

Thin Solid Films ◽

10.1016/j.tsf.2012.09.081 ◽

2013 ◽

Vol 528 ◽

pp. 224-228 ◽

Cited By ~ 11

Author(s):

Min-Chen Chen ◽

Ting-Chang Chang ◽

Yi-Chieh Chiu ◽

Shih-Cheng Chen ◽

Sheng-Yao Huang ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application

Current Applied Physics ◽

10.1016/j.cap.2010.12.005 ◽

2011 ◽

Vol 11 (3) ◽

pp. 849-852 ◽

Cited By ~ 26

Author(s):

Lin Chen ◽

Qing-Qing Sun ◽

Jing-Jing Gu ◽

Yan Xu ◽

Shi-Jin Ding ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Atomic Layer ◽

Bipolar Resistive Switching ◽

Switching Characteristics

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Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4881720 ◽

2014 ◽

Vol 104 (22) ◽

pp. 223505 ◽

Cited By ~ 21

Author(s):

Y. J. Fu ◽

F. J. Xia ◽

Y. L. Jia ◽

C. J. Jia ◽

J. Y. Li ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Memory Applications

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Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.10.251 ◽

2018 ◽

Vol 732 ◽

pp. 573-584 ◽

Cited By ~ 24

Author(s):

Aize Hao ◽

Muhammad Ismail ◽

Shuai He ◽

Ni Qin ◽

Wenhua Huang ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Nickel Ferrite ◽

Nonvolatile Memory ◽

Magnetic Thin Films ◽

Switching Characteristics ◽

Memory Applications ◽

Unipolar Resistive Switching

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Bipolar Resistive Switching Characteristics of TiN/HfO x /ITO Devices for Resistive Random Access Memory Applications

Chinese Physics Letters ◽

10.1088/0256-307x/30/10/107302 ◽

2013 ◽

Vol 30 (10) ◽

pp. 107302 ◽

Cited By ~ 5

Author(s):

Ting-Ting Tan ◽

Xi Chen ◽

Ting-Ting Guo ◽

Zheng-Tang Liu

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Memory Applications

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Resistive switching characteristics of metal oxide for nonvolatile memory applications

2008 9th International Conference on Solid-State and Integrated-Circuit Technology ◽

10.1109/icsict.2008.4734691 ◽

2008 ◽

Author(s):

R. Dong ◽

M. Hasan ◽

H. J. Choi ◽

D. S. Lee ◽

M. B. Pyun ◽

...

Keyword(s):

Metal Oxide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

Physics Letters A ◽

10.1016/j.physleta.2013.07.018 ◽

2013 ◽

Vol 377 (37) ◽

pp. 2432-2435 ◽

Cited By ~ 15

Author(s):

V. Senthilkumar ◽

A. Kathalingam ◽

S. Valanarasu ◽

V. Kannan ◽

Jin-Koo Rhee

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Bipolar Resistive Switching ◽

Solution Processed ◽

Memory Applications

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Bipolar resistive switching of zinc-tin-oxide resistive random access memory

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144646 ◽

2011 ◽

Cited By ~ 1

Author(s):

Santosh Murali ◽

Jaana Saranya Rajachidambaram ◽

Seung-Yeol Han ◽

Chih-Hung Chang ◽

Gregory S. Herman ◽

...

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Zinc Tin Oxide

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