Resistive switching effect in metal/insulator/metal heterostructures and its application for non-volatile memory

2007 ◽  
Vol 2 (4) ◽  
pp. 453-457 ◽  
Author(s):  
H. Akinaga ◽  
H. Shima ◽  
F. Takano ◽  
I. H. Inoue ◽  
H. Takagi
Keyword(s):  
Resistive Switching ◽  
Switching Effect ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Resistive Switching Effect

Nanoscale Correlations between Metal–Insulator Transition and Resistive Switching Effect in Metallic Perovskite Oxides

Small ◽  
2020 ◽  
Vol 16 (23) ◽  
pp. 2001307
Author(s):  
Juan Carlos Gonzalez‐Rosillo ◽  
Sara Catalano ◽  
Ivan Maggio‐Aprile ◽  
Marta Gibert ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxides ◽  
Insulator Transition ◽  
Switching Effect ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Resistive Switching Effect

A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
K.D. Leedy ◽  
S. Addepalli ◽  
N.C. Cady
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Switching Performance ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
And Behavior ◽  
Switching Devices

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

Resistive switching effect of Ag/MoS2/FTO device

2015 ◽  
Vol 08 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Bai Sun ◽  
Wenxi Zhao ◽  
Yonghong Liu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
Electric Pulse ◽  
Metal Structure ◽  
Switching Behavior ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Resistance Change ◽  
Non Volatile Memory ◽  
State Resistance ◽  
Resistive Switching Effect

The electric-pulse-driven resistance change of metal/oxides/metal structure, which is called resistive switching effect, is a fascinating phenomenon for the development of next generation non-volatile memory. In this work, an outstanding bipolar resistive switching behavior of Ag / MoS 2/fluorine-doped tin oxide (FTO) device is demonstrated. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 at room temperature.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect

Resistive Switching Effect of the Structure Based on Silicon Nitride

2021 ◽  
Vol 66 (1) ◽  
pp. 133-138
Author(s):  
F. F. Komarov ◽  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
I. N. Parkhomenko ◽  
A. A. Tsivako ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Resistive Switching ◽  
Switching Effect ◽  
Resistive Switching Effect
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