Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Chih-Ming Lin; Wen-chieh Shih; Ingram Yin-ku Chang; Pi-Chun Juan; Joseph Ya-min Lee

doi:10.1063/1.3114403

Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.3114403 ◽

2009 ◽

Vol 94 (14) ◽

pp. 142905 ◽

Cited By ~ 27

Author(s):

Chih-Ming Lin ◽

Wen-chieh Shih ◽

Ingram Yin-ku Chang ◽

Pi-Chun Juan ◽

Joseph Ya-min Lee

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Applications

Download Full-text

New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

Download Full-text

High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

High-k Gate Dielectrics for CMOS Technology ◽

10.1002/9783527646340.ch15 ◽

2012 ◽

pp. 471-499 ◽

Cited By ~ 6

Author(s):

Xubing Lu

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

High K ◽

Memory Applications

Download Full-text

Al/Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3]/Polycrystalline Silicon/Insulator (Y[sub 2]O[sub 3])/Si Field Effect Transistors for Nonvolatile Memory Applications

Electrochemical and Solid-State Letters ◽

10.1149/1.3275961 ◽

2010 ◽

Vol 13 (3) ◽

pp. H73 ◽

Cited By ~ 1

Author(s):

Po-Chin Chan ◽

Ingram Yin-Ku Chang ◽

Pi-Chun Juan ◽

Joseph Ya-min Lee

Keyword(s):

Polycrystalline Silicon ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Applications

Download Full-text

New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Meeting Abstracts ◽

10.1149/ma2010-01/18/1013 ◽

2010 ◽

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

Download Full-text

Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al∕La2O3∕Ta2O5∕SiO2∕Si structure for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.2800821 ◽

2007 ◽

Vol 91 (19) ◽

pp. 192903 ◽

Cited By ~ 21

Author(s):

Chih-Hao Cheng ◽

Joseph Ya-Min Lee

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

Download Full-text

Hf $_{0.5}$ Zr $_{0.5}$ O₂-Based Ferroelectric Field-Effect Transistors With HfO₂Seed Layers for Radiation-Hard Nonvolatile Memory Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3095036 ◽

2021 ◽

pp. 1-5

Author(s):

Chen Liu ◽

Wenwu Xiao ◽

Yue Peng ◽

Binjian Zeng ◽

Shuaizhi Zheng ◽

...

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Applications ◽

Radiation Hard ◽

Seed Layers

Download Full-text

Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications

Journal of Applied Physics ◽

10.1063/1.2924434 ◽

2008 ◽

Vol 103 (9) ◽

pp. 094110 ◽

Cited By ~ 36

Author(s):

Wen-Chieh Shih ◽

Pi-Chun Juan ◽

Joseph Ya-min Lee

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization ◽

Memory Applications

Download Full-text

Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

Download Full-text

Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Applied Physics Letters ◽

10.1063/1.122943 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3941-3943 ◽

Cited By ~ 53

Author(s):

Nasir Abdul Basit ◽

Hong Koo Kim ◽

Jean Blachere

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates

Download Full-text

Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

IEEE Electron Device Letters ◽

10.1109/led.2007.906797 ◽

2007 ◽

Vol 28 (11) ◽

pp. 964-966 ◽

Cited By ~ 11

Author(s):

Hsin-hao Hsu ◽

Ingram Yin-ku Chang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Memory Applications

Download Full-text