Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications
2015 ◽
Vol 32
(12)
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pp. 127101
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2010 ◽
Vol 49
(2)
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pp. 02BD08
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2010 ◽
Vol 25
(11)
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pp. 115013
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2009 ◽
Vol 55
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pp. 28-31
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Keyword(s):
2016 ◽
Vol 16
(12)
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pp. 12831-12834