Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

Author(s):  
Irina Antonova ◽  
Mitrofan Gulyaev ◽  
Vladimir Skuratov ◽  
Denis Marin ◽  
Elvira Zaikina ◽  
...  
2007 ◽  
Vol 131-133 ◽  
pp. 541-546 ◽  
Author(s):  
I.V. Antonova ◽  
M.B. Gulyaev ◽  
V.A. Skuratov ◽  
D.V. Marin ◽  
E.V. Zaikina ◽  
...  

Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.


2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER

Author(s):  
Ueno Keiji ◽  
Matsumoto Yasuyo ◽  
Nishimiya Nobuyuki ◽  
Noshiro Mitsuru ◽  
Satou Mamoru
Keyword(s):  

Vacuum ◽  
1992 ◽  
Vol 43 (5-7) ◽  
pp. 699-701 ◽  
Author(s):  
L Ya Alimova ◽  
IE Djamaletdinova ◽  
TS Pugacheva ◽  
IE Ilicheva

Author(s):  
E.P Neustroev ◽  
I.V Antonova ◽  
V.I Obodnikov ◽  
V.P Popov ◽  
V.A Skuratov ◽  
...  

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