Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Jingfeng Yang; Jiaqi Yang; Baoguang Yan; Gang Du; Xiaoyan Liu; Ruqi Han; Jinfeng Kang; C. C. Liao; Z. H. Gan; M. Liao; J. P. Wang; W. Wong

doi:10.1063/1.3079406

Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Applied Physics Letters ◽

10.1063/1.3079406 ◽

2009 ◽

Vol 94 (8) ◽

pp. 082103 ◽

Cited By ~ 1

Author(s):

Jingfeng Yang ◽

Jiaqi Yang ◽

Baoguang Yan ◽

Gang Du ◽

Xiaoyan Liu ◽

...

Keyword(s):

Frequency Dependence ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual ◽

10.1109/relphy.2007.369571 ◽

2007 ◽

Author(s):

S. Wang ◽

D. S. Ang ◽

G. A. Du

Keyword(s):

Frequency Dependence ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

The Impact

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Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs

IEEE Electron Device Letters ◽

10.1109/led.2020.2992263 ◽

2020 ◽

Vol 41 (7) ◽

pp. 965-968

Author(s):

Longda Zhou ◽

Qingzhu Zhang ◽

Hong Yang ◽

Zhigang Ji ◽

Zhaohao Zhang ◽

...

Keyword(s):

Frequency Dependence ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Cited By ~ 2

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.923524 ◽

2008 ◽

Vol 55 (7) ◽

pp. 1630-1638 ◽

Cited By ~ 39

Author(s):

Vrajesh D. Maheta ◽

Christopher Olsen ◽

Khaled Ahmed ◽

Souvik Mahapatra

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

The Impact

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Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996644 ◽

2003 ◽

Cited By ~ 102

Author(s):

V. Reddy ◽

A.T. Krishnan ◽

A. Marshall ◽

J. Rodriguez ◽

S. Natarajan ◽

...

Keyword(s):

Digital Circuit ◽

Negative Bias ◽

Circuit Reliability ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of substrate bias on p-MOSFET negative bias temperature instability

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493212 ◽

2005 ◽

Cited By ~ 2

Author(s):

P.B. Kurnars ◽

T.R. Dalei ◽

D. Varghese ◽

D. Saba ◽

S. Mahapatra ◽

...

Keyword(s):

Negative Bias ◽

Substrate Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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