scholarly journals Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots

2009 ◽  
Vol 94 (6) ◽  
pp. 061916 ◽  
Author(s):  
P. Miska ◽  
J. Even ◽  
X. Marie ◽  
O. Dehaese
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Dynamics

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

scholarly journals Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

2021 ◽  
Vol 129 (5) ◽  
pp. 054301
Author(s):  
M. Hrytsaienko ◽  
M. Gallart ◽  
M. Ziegler ◽  
O. Crégut ◽  
S. Tamariz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Carrier Dynamics ◽  
Lateral Confinement ◽  
Uv Range

Carrier dynamics in p-type InGaAs/GaAs quantum dots

2007 ◽  
Vol 18 (S1) ◽  
pp. 363-365 ◽  
Author(s):  
X. M. Wen ◽  
L. V. Dao ◽  
J. A. Davis ◽  
P. Hannaford ◽  
S. Mokkapati ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
P Type

Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
Randy J. Ellingson ◽  
Jeff L. Blackburn ◽  
Jovan Nedeljkovic ◽  
Garry Rumbles ◽  
Marcus Jones ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Investigation ◽  
Electronic Structure ◽  
Indium Phosphide

Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer

2008 ◽  
Vol 93 (3) ◽  
pp. 033107 ◽  
Author(s):  
Wen-Hao Chang ◽  
Yu-An Liao ◽  
Wei-Ting Hsu ◽  
Ming-Chih Lee ◽  
Pei-Chin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Type Ii

Few-Particle Effects in Nonlinear Optical Spectra of Semiconductor Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Density Matrix ◽  
Nonlinear Optical ◽  
Coherent Control ◽  
Optical Spectra ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Nonequilibrium Carrier ◽  
Optical Nonlinearities ◽  
Matrix Approach

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots

2000 ◽  
Vol 76 (3) ◽  
pp. 339-341 ◽  
Author(s):  
L. W. Wang ◽  
A. J. Williamson ◽  
Alex Zunger ◽  
H. Jiang ◽  
J. Singh
Keyword(s):  
Quantum Dots ◽  
Electronic Structure
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