Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
2010 ◽
Vol 24
(22)
◽
pp. 4293-4304
◽
2007 ◽
Vol 18
(S1)
◽
pp. 363-365
◽
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