Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots

2000 ◽  
Vol 76 (3) ◽  
pp. 339-341 ◽  
Author(s):  
L. W. Wang ◽  
A. J. Williamson ◽  
Alex Zunger ◽  
H. Jiang ◽  
J. Singh
Keyword(s):  
Quantum Dots ◽  
Electronic Structure

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
Randy J. Ellingson ◽  
Jeff L. Blackburn ◽  
Jovan Nedeljkovic ◽  
Garry Rumbles ◽  
Marcus Jones ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Investigation ◽  
Electronic Structure ◽  
Indium Phosphide

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Effect of Shape Anisotropy and Size on the Electronic Structure of CdSe/ZnSe Quantum Dots

2013 ◽  
Vol 12 (6) ◽  
pp. 925-930 ◽  
Author(s):  
Dharmendra Kumar ◽  
Chandra Mohan Singh Negi ◽  
Saral K. Gupta ◽  
Jitendra Kumar
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Shape Anisotropy

Low temperature dynamics of surface and bulk electronic structure of quantum dots

2017 ◽  
Vol 4 (9) ◽  
pp. 094001
Author(s):  
G Krishnamurthy Grandhi ◽  
Renu Tomar ◽  
Ranjani Viswanatha
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Low Temperature ◽  
Temperature Dynamics

Electronic Structure of Long Wavelength (>1.3μm) GaAsSb-capped InAs Quantum Dots

2007 ◽  
Author(s):  
T. J. Badcock ◽  
D. J. Mowbray ◽  
E. Nabavi ◽  
H. Y. Liu ◽  
M. J. Steer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Inas Quantum Dots ◽  
Long Wavelength

Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots

2013 ◽  
Vol 22 (1) ◽  
pp. 017304
Author(s):  
Xin Song ◽  
Hao Feng ◽  
Yu-Min Liu ◽  
Zhong-Yuan Yu ◽  
Jian-Tao Liu
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Strain Compensation ◽  
Compensation Layer
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