Leakage current behavior of SrBi2Ta2O9 ferroelectric thin films on different bottom electrodes

2002 ◽  
Vol 92 (10) ◽  
pp. 6160-6164 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Thin Films ◽  
Current Behavior

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

2002 ◽  
Vol 748 ◽  
Author(s):  
Shin Kikuchi ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Remnant Polarization ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

Memory Properties of SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 Thin Films Prepared on Si Substrate

2010 ◽  
Vol 434-435 ◽  
pp. 304-306
Author(s):  
Wen Cheng Tzou ◽  
Kai Huang Chen ◽  
Cheng Fu Yang ◽  
Ying Chung Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Chamber Pressure ◽  
Rf Power ◽  
Si Substrate ◽  
Oxygen Concentrations

In this study, ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and different oxygen concentrations. The surface morphology of deposited thin films is observed from the FESEM images, and the memory windows and leakage current of the Al/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer, respectively. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

2007 ◽  
Vol 101 (3) ◽  
pp. 034106 ◽  
Author(s):  
Arnab Mukherjee ◽  
P. Victor ◽  
J. Parui ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Current Behavior
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