Angle Effects in High Current Ion Implantation

2008 ◽  
Author(s):  
Joseph C. Olson ◽  
Christopher Campbell ◽  
Kyoichi Suguro ◽  
Yoshimasa Kawase ◽  
Hiroyuki Ito ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Current

scholarly journals A broad-beam, high-current metal-ion implantation facility

1991 ◽  
Vol 55 (1-4) ◽  
pp. 506-510 ◽  
Author(s):  
I.G. Brown ◽  
M.R. Dickinson ◽  
J.E. Galvin ◽  
X. Godechot ◽  
R.A. MacGill
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
High Current ◽  
Broad Beam ◽  
Metal Ion Implantation

Formation of LaSi2-xLayers on Si by High-Current La Ion Implantation

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2834-2838
Author(s):  
Xiao Jia Tang ◽  
Xiang Qian Cheng ◽  
Run Shun Wang ◽  
Bai Xin Liu
Keyword(s):  
Ion Implantation ◽  
High Current

Synthesis of Buried Silicon Compounds Using Ion Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. M. Gibson ◽  
R. Hull
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Silicon On Insulator ◽  
High Current ◽  
New Materials ◽  
Compound Formation ◽  
Silicon Compounds ◽  
Mechanisms Of Formation ◽  
New Generation ◽  
Substrate Temperatures

ABSTRACTIon implantation is widely used for doping semiconductors at low concentration, but, with the advent of a new generation of high current implanters, synthesizing new materials rather that simply doping them has become feasible. This technique has been successfully applied to fabricating silicon-on-insulator (SOI) structures with oxygen and nitrogen for several years. Since we are interested in understanding the mechanisms of formation of these layers, we have concentrated on sub-stoichiometric implantation doses of oxygen where it is easier to observe the coalescing layer. In order to determine whether this process of compound formation is more general, our studies were expanded to include implantation of the transition metals. Here, elevated substrate temperatures are necessary to minimize Si surface damage. The resulting disilicide layers are of remarkably high quality: they are single crystals in registry with the silicon wafer and they have better residual resistivities than comparable UHV-reacted silicides.

NV-GSD-A High Current Ion Implantation System

1993 ◽  
pp. 379-383
Author(s):  
T. Tamai ◽  
P. Splinter ◽  
J. Murakami ◽  
T. Shiraishi ◽  
K. Komatsu
Keyword(s):  
Ion Implantation ◽  
High Current
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