High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

2011 ◽  
Vol 29 (3) ◽  
pp. 032211 ◽  
Author(s):  
Myungsim Jun ◽  
Youngsam Park ◽  
Younghoon Hyun ◽  
Taehyoung Zyung ◽  
Moongyu Jang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Barrier Metal ◽  
P Type

Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

2008 ◽  
Vol 44 (2) ◽  
pp. 159 ◽  
Author(s):  
C.-J. Choi ◽  
M.-G. Jang ◽  
Y.-Y. Kim ◽  
M.-S. Jun ◽  
T.-Y. Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Barrier Metal ◽  
P Type ◽  
20 Nm

Platinum Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique

2009 ◽  
Vol 156 (8) ◽  
pp. H621 ◽  
Author(s):  
Ran-Ju Moon ◽  
Myeong-II Jeong ◽  
S. V. Jagdeesh Chandra ◽  
Kyu-Hwan Shim ◽  
Moongyu Jang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Barrier Metal ◽  
P Type
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