In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As
2012 ◽
Vol 30
(1)
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pp. 01A158
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2012 ◽
Vol 30
(1)
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pp. 01A143
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2016 ◽
Vol 6
(18)
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pp. 6778-6783
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2017 ◽
Vol 9
(18)
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pp. 15848-15856
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1997 ◽
Vol 112
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pp. 236-242
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1994 ◽
Vol 4
(8)
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pp. 1239-1244
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