scholarly journals Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

2008 ◽  
Vol 104 (7) ◽  
pp. 073521 ◽  
Author(s):  
P. Roura ◽  
J. Farjas ◽  
P. Roca i Cabarrocas
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Strain Energy ◽  
Bond Angle

Transient Structural Relaxation and Melting Temperature of Amorphous Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
W. C. Sinke ◽  
T. Warabisako ◽  
M. Miyao ◽  
T. Tokuyama ◽  
S. Roorda ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Heating Rate ◽  
Melting Temperature ◽  
Structural Relaxation ◽  
Strain Energy ◽  
Bond Angle ◽  
Random Network ◽  
Average Bond

ABSTRACTThe structure of ion-implanted a-Si has been studied using Raman spectroscopy. It is shown that the average bond-angle distortion and the strain energy stored in the random network vary drastically upon annealing. Relaxation is enhanced in the case of heating by laser irradiation. The results imply that the apparent melting temperature of a-Si may vary from one experiment to another, depending on the heating rate and -method.

Variable strain energy in amorphous silicon

1988 ◽  
Vol 3 (6) ◽  
pp. 1201-1207 ◽  
Author(s):  
W. C. Sinke ◽  
S. Roorda ◽  
F. W. Saris
Keyword(s):  
Raman Spectroscopy ◽  
Free Energy ◽  
Amorphous Silicon ◽  
Melting Temperature ◽  
Structural Relaxation ◽  
Laser Heating ◽  
Strain Energy ◽  
Preparation Conditions ◽  
Calorimetric Measurements ◽  
Initial States

Different Raman experiments on structural relaxation of a-Si and a-Ge are reviewed and discussed in relation to calorimetric measurements on a-Ge. On the basis of the correlation found between results from Raman spectroscopy and results from calorimetry in the case of a-Ge and of the strong similarity between a-Si and a-Ge in terms of their Raman spectra, it is suggested that the strain energy in a-Si may vary considerably with preparation conditions and subsequent treatments. Under this assumption the a-Si Gibbs free energy versus temperature has been constructed for material in different initial states of relaxation. It is shown that the melting temperature of amorphous silicon should increase when relaxation occurs during the heating phase prior to melting. Thus differences in apparent melting temperature, as observed under different laser heating conditions, may be explained.

Separating the effects of hydrogen and bond-angle variation on the amorphous-silicon band gap

1993 ◽  
Vol 48 (19) ◽  
pp. 14656-14658 ◽  
Author(s):  
A. J. M. Berntsen ◽  
W. F. van der Weg ◽  
P. A. Stolk ◽  
F. W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Bond Angle ◽  
Angle Variation

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Variations of the silicon network of amorphous silicon studied by Raman spectroscopy

1987 ◽  
Vol 97-98 ◽  
pp. 399-402 ◽  
Author(s):  
Y. Hishikawa ◽  
K. Watanabe ◽  
S. Tsuda ◽  
S. Nakano ◽  
M. Ohnishi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon
Sign in / Sign up

Export Citation Format

Share Document