Separating the effects of hydrogen and bond-angle variation on the amorphous-silicon band gap

1993 ◽  
Vol 48 (19) ◽  
pp. 14656-14658 ◽  
Author(s):  
A. J. M. Berntsen ◽  
W. F. van der Weg ◽  
P. A. Stolk ◽  
F. W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Bond Angle ◽  
Angle Variation

Bond-Angle Variation and Microstructure in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
A. J. M. Berntsen ◽  
M. J. Van Den Boogaard ◽  
W. G. J. H. M. Van Sark ◽  
W. F. Van Der Weg
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Bond Angle ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Disorder ◽  
Angle Variation ◽  
Model Calculations ◽  
Scattering Measurements ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous

ABSTRACTA series of hydrogenated amorphous silicon (a-Si:H) films was deposited by rf glow-discharge deposition using various processing conditions. We have studied microstructure in the films by means of infrared absorption spectroscopy. Small-angle X-ray scattering measurements were used to determine the microvoid fractions of a few selected samples. Our results show that both the void fraction and the amount of microstructure can be varied either by changing the substrate temperature or by H2 dilution. Bond-angle variation in the films was probed by Raman scattering measurements. The Raman data indicate that the substrate temperature is the main variable that determines the bond-angle variation. We conclude that the presence of microvoids in a-Si:H does not influence the structural disorder of the amorphous matrix surrounding the voids. Our results are in agreement with experimental work on microvoids in a-Si1-xCx:H, and model calculations on voids in a-Si.

Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

1998 ◽  
Vol 84 (3) ◽  
pp. 1333-1339 ◽  
Author(s):  
Wataru Futako ◽  
Shinya Takeoka ◽  
Charles M. Fortmann ◽  
Isamu Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

Optimum band gap for amorphous silicon based solar cells

2002 ◽  
Author(s):  
P. Fiorini ◽  
A. Mittiga ◽  
I. Chambouleyron ◽  
F. Evangelisti
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Based

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

2004 ◽  
Vol 81 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
Francisco A. Rubinelli ◽  
Wim M. Arnoldbik ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Experimental Verification ◽  
Silicon Germanium ◽  
Band Gap Engineering ◽  
Computer Aided ◽  
Amorphous Silicon Germanium

Band‐gap profiling for improving the efficiency of amorphous silicon alloy solar cells

1989 ◽  
Vol 54 (23) ◽  
pp. 2330-2332 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Alloy
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