Transient Structural Relaxation and Melting Temperature of Amorphous Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
W. C. Sinke ◽  
T. Warabisako ◽  
M. Miyao ◽  
T. Tokuyama ◽  
S. Roorda ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Heating Rate ◽  
Melting Temperature ◽  
Structural Relaxation ◽  
Strain Energy ◽  
Bond Angle ◽  
Random Network ◽  
Average Bond

ABSTRACTThe structure of ion-implanted a-Si has been studied using Raman spectroscopy. It is shown that the average bond-angle distortion and the strain energy stored in the random network vary drastically upon annealing. Relaxation is enhanced in the case of heating by laser irradiation. The results imply that the apparent melting temperature of a-Si may vary from one experiment to another, depending on the heating rate and -method.

Variable strain energy in amorphous silicon

1988 ◽  
Vol 3 (6) ◽  
pp. 1201-1207 ◽  
Author(s):  
W. C. Sinke ◽  
S. Roorda ◽  
F. W. Saris
Keyword(s):  
Raman Spectroscopy ◽  
Free Energy ◽  
Amorphous Silicon ◽  
Melting Temperature ◽  
Structural Relaxation ◽  
Laser Heating ◽  
Strain Energy ◽  
Preparation Conditions ◽  
Calorimetric Measurements ◽  
Initial States

Different Raman experiments on structural relaxation of a-Si and a-Ge are reviewed and discussed in relation to calorimetric measurements on a-Ge. On the basis of the correlation found between results from Raman spectroscopy and results from calorimetry in the case of a-Ge and of the strong similarity between a-Si and a-Ge in terms of their Raman spectra, it is suggested that the strain energy in a-Si may vary considerably with preparation conditions and subsequent treatments. Under this assumption the a-Si Gibbs free energy versus temperature has been constructed for material in different initial states of relaxation. It is shown that the melting temperature of amorphous silicon should increase when relaxation occurs during the heating phase prior to melting. Thus differences in apparent melting temperature, as observed under different laser heating conditions, may be explained.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

1984 ◽  
Vol 52 (26) ◽  
pp. 2360-2363 ◽  
Author(s):  
Michael O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Melting Temperature ◽  
Pulsed Laser ◽  
Explosive Crystallization ◽  
Pulsed Laser Irradiation

Raman Spectroscopy Study of Pulsed Laser Induced Structural Transformations in Amorphous Ge Films

1995 ◽  
Vol 397 ◽  
Author(s):  
C. García ◽  
A.C. Prieto ◽  
J. Jiménez ◽  
J. Siegel ◽  
J. Solís ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallization Process ◽  
Bond Angle ◽  
Pulsed Laser ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Structural Transformations ◽  
Spectroscopy Study ◽  
Glass Substrates ◽  
Average Bond

ABSTRACTStructural transformations induced in amorphous Ge films by picosecond laser pulses are studied by means of Raman spectroscopy and their dependence on parameters like the pulse fluence or the thermal conductivity of the substrate are analyzed. A correlation length model is used for studying the crystallization process, while the average bond angle distortion is used for determining the state of relaxation of the amorphous phase. Silicon and glass substrates are compared.

Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Stolk ◽  
A.J.M. Berntsen ◽  
F.W. Saris ◽  
W.F. Van Der Weg
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Long Range ◽  
Structural Relaxation ◽  
Carrier Lifetime ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Treatments ◽  
Hydrogen Passivation ◽  
Hydrogenated Amorphous

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

Raman Spectroscopy and Positron Lifetime Studies of Structural Relaxation and Defect Evolution in Amorphous Silicon

1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5515-5519 ◽  
Author(s):  
Yuichi Hiroyama ◽  
Ryoichi Suzuki ◽  
YoshiyukiHirano ◽  
Fumio Sato ◽  
TeruakiMotooka
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Structural Relaxation ◽  
Positron Lifetime ◽  
Defect Evolution ◽  
Lifetime Studies

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide
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