Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate

2008 ◽  
Vol 104 (6) ◽  
pp. 064501 ◽  
Author(s):  
Jin-Hong Park ◽  
Munehiro Tada ◽  
Pawan Kapur ◽  
Hailin Peng ◽  
Krishna C. Saraswat
2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


2016 ◽  
Vol 5 (6) ◽  
pp. P353-P360 ◽  
Author(s):  
Qian Zhou ◽  
Edwin Bin Leong Ong ◽  
Sin Leng Lim ◽  
Saumitra Vajandar ◽  
Thomas Osipowicz ◽  
...  

2007 ◽  
Vol 329 ◽  
pp. 397-402
Author(s):  
Ji Wang Yan ◽  
Yu Feng Fan ◽  
Nobuhito Yoshihara ◽  
Tsunemoto Kuriyagawa ◽  
Shoji Yokoyama

This paper deals with the mechanism of surface heterogeneity due to crystallographic anisotropy effects in diamond turning of single-crystalline germanium. A microplasticity-based numerical simulation model was proposed, in which the effects of tool geometry and machining conditions can be involved. Two coefficients were introduced to compensate the Schmid factors of two different types of symmetrical slip systems. Simulation of ductile machinability was conducted on two crystallographic planes (100) and (111), and the simulation results were consistent with the experimental results. It was indicated that the simulation model can be used to predict the brittle-ductile boundary change with machining conditions and crystal orientations of germanium.


2011 ◽  
Vol 32 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Yao-Jen Lee ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Ho-Ming Lin ◽  
Shich-Chuang Wu ◽  
...  

2016 ◽  
Vol 13 (2) ◽  
pp. 147-151 ◽  
Author(s):  
Sung Wook Kim ◽  
Jaejun Lee ◽  
Youn Ho Park ◽  
Jeong Min Park ◽  
Sangwon Park ◽  
...  

2017 ◽  
Vol 64 (5) ◽  
pp. 1985-1990 ◽  
Author(s):  
Qinglei Guo ◽  
Yangfu Fang ◽  
Miao Zhang ◽  
Gaoshan Huang ◽  
Paul K. Chu ◽  
...  

2015 ◽  
Vol 106 (4) ◽  
pp. 041902 ◽  
Author(s):  
H. Higashi ◽  
K. Kasahara ◽  
K. Kudo ◽  
H. Okamoto ◽  
K. Moto ◽  
...  

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