AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator

2008 ◽  
Vol 104 (5) ◽  
pp. 054116 ◽  
Author(s):  
Sarbani Basu ◽  
Pramod K. Singh ◽  
Po-Wen Sze ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Liquid

scholarly journals Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 970
Author(s):  
Yuan-Ming Chen ◽  
Hsien-Cheng Lin ◽  
Kuan-Wei Lee ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Current Density ◽  
Electron Mobility ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Mos

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

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