Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements

2008 ◽  
Vol 93 (10) ◽  
pp. 102114 ◽  
Author(s):  
Tiziana Cesca ◽  
Andrea Gasparotto ◽  
Beatrice Fraboni
Keyword(s):  
High Resistivity ◽  
Current Voltage ◽  
Ion Implanted

Ion Implanted N-Type Resistors on High-Resistivity Substrates

1973 ◽  
Vol 10 (6) ◽  
pp. 944-947 ◽  
Author(s):  
J. W. Hanson ◽  
R. J. Huber ◽  
J. N. Fordemwalt
Keyword(s):  
High Resistivity ◽  
Ion Implanted

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

Ion implanted camel diodes fabricated on high resistivity silicon for microwave and millimetre-wave applications

2002 ◽  
Vol 38 (20) ◽  
pp. 1228 ◽  
Author(s):  
Vo Van Tuyen ◽  
Yunhong Wu ◽  
Zhirun Hu ◽  
A.A. Rezazadeh
Keyword(s):  
High Resistivity ◽  
Millimetre Wave ◽  
High Resistivity Silicon ◽  
Ion Implanted

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

1992 ◽  
Vol 65 (4) ◽  
pp. 849-853 ◽  
Author(s):  
R. W. van der Heijden ◽  
G. Chen ◽  
A. T. A. M. De Waele ◽  
H. M. Gijsman ◽  
F. P. B. Tielen
Keyword(s):  
Hopping Transport ◽  
Transport Regime ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Implanted

High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
R. K. Chilukuri ◽  
P. Ananthanarayanan ◽  
V. Nagapudi ◽  
B. J. Baliga
Keyword(s):  
Breakdown Voltage ◽  
Dielectric Material ◽  
High Resistivity ◽  
Leakage Currents ◽  
Plate Edge ◽  
Field Plate ◽  
P Type ◽  
Post Implantation ◽  
Anneal Temperature ◽  
Ion Implanted

ABSTRACTIn this paper, we report the successful use of field plates as planar edge terminations for P+-N as well as N+-P planar ion implanted junction diodes on 6H- and 4H-SiC. Process splits were done to vary the dielectric material (SiO2 vs. Si3N4), the N-type implant (nitrogen vs. phosphorous), the P-type implant (aluminum vs. boron), and the post-implantation anneal temperature. The nitrogen implanted diodes on 4H-SiC with field plates using SiO2 as the dielectric, exhibited a breakdown voltage of 1100 V, which is the highest ever reported measured breakdown voltage for any planar ion implanted junction diode and is nearly 70% of the ideal breakdown voltage. The reverse leakage current of this diode was less than 1×10−5 A/cm2 even at breakdown. The unterminated nitrogen implanted diodes blocked lower voltages (∼840V). In contrast, the unterminated aluminum implanted diodes exhibited higher breakdown voltages (∼80OV) than the terminated diodes (∼275V). This is attributed to formation of a high resistivity layer at the surface near the edges of the diode by the P-type ion implant, acting as a junction termination extension. Diodes on 4H-SiC showed higher breakdown than those on 6H-SiC. Breakdown voltages were independent of temperature in the range of 25 °C to 150 °C, while the leakage currents increased slowly with temperature, indicating surface dominated components.

Effect Of High Concentration Of Defect States At PS/c-Si Heterointerface On Transport Properties Of Al/PS/c-Si Photodiode Structures

1997 ◽  
Vol 486 ◽  
Author(s):  
L. A. Balagurov ◽  
A. F. Orlov ◽  
E. A. Petrova ◽  
D. G. Yarkin ◽  
S. Ya. Andryushin
Keyword(s):  
Porous Silicon ◽  
Open Circuit ◽  
High Resistivity ◽  
Defect States ◽  
High Concentration ◽  
Band Bending ◽  
Current Voltage ◽  
Electron Beam Induced Current ◽  
Charged Defects ◽  
Two Sides

AbstractCurrent-voltage characteristics, photosensitivity, frequency dependence of impedance, and electron beam induced current were measured for Al/porous silicon/c-Si structures with porous silicon (PS) layers of 60 and 80% porosity. Al/PS/c-Si structures have photosensitivity spectra typical for Al/c-Si structures. The sign of open circuit voltage changes in these structures when the wavelength becomes less than approximately 0.4 μm. It was shown that photosensitivity of Al/PS/c-Si structures and impedance dependence on the frequency, reverse bias and thickness of PS layer are completely determined by the PS layer of high resistivity and by the space charge region in c-Si substrate on PS/c-Si heterojunction. The annealing at above 100° C leads to a decrease of the forward current at a small bias. The photosensitivity of annealed structures reaches 10 A/W for some of the structures. The experimental results lead to inevitable conclusion about opposite band bending from the two sides of the heterojunction which is caused by high concentration of charged defects at PS/c-Si heterointerface. PS photodetectors with improved device parameter were obtained.

Optically controlled current-voltage characteristics of ion-implanted MESFETs

1990 ◽  
Vol 33 (12) ◽  
pp. 1499-1509 ◽  
Author(s):  
S.Noor Mohammad ◽  
M.Selim Ünlü ◽  
Hadis Morkoç
Keyword(s):  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Implanted
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