High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
R. K. Chilukuri ◽  
P. Ananthanarayanan ◽  
V. Nagapudi ◽  
B. J. Baliga
Keyword(s):  
Breakdown Voltage ◽  
Dielectric Material ◽  
High Resistivity ◽  
Leakage Currents ◽  
Plate Edge ◽  
Field Plate ◽  
P Type ◽  
Post Implantation ◽  
Anneal Temperature ◽  
Ion Implanted

ABSTRACTIn this paper, we report the successful use of field plates as planar edge terminations for P+-N as well as N+-P planar ion implanted junction diodes on 6H- and 4H-SiC. Process splits were done to vary the dielectric material (SiO2 vs. Si3N4), the N-type implant (nitrogen vs. phosphorous), the P-type implant (aluminum vs. boron), and the post-implantation anneal temperature. The nitrogen implanted diodes on 4H-SiC with field plates using SiO2 as the dielectric, exhibited a breakdown voltage of 1100 V, which is the highest ever reported measured breakdown voltage for any planar ion implanted junction diode and is nearly 70% of the ideal breakdown voltage. The reverse leakage current of this diode was less than 1×10−5 A/cm2 even at breakdown. The unterminated nitrogen implanted diodes blocked lower voltages (∼840V). In contrast, the unterminated aluminum implanted diodes exhibited higher breakdown voltages (∼80OV) than the terminated diodes (∼275V). This is attributed to formation of a high resistivity layer at the surface near the edges of the diode by the P-type ion implant, acting as a junction termination extension. Diodes on 4H-SiC showed higher breakdown than those on 6H-SiC. Breakdown voltages were independent of temperature in the range of 25 °C to 150 °C, while the leakage currents increased slowly with temperature, indicating surface dominated components.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

2017 ◽  
Vol 897 ◽  
pp. 439-442 ◽  
Author(s):  
Roberta Nipoti ◽  
Maurizio Puzzanghera ◽  
Giovanna Sozzi
Keyword(s):  
Carrier Lifetime ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Leakage Currents ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Lower Annealing Temperature ◽  
C 30 ◽  
Post Implantation ◽  
Ion Implanted

The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm-3 against 2×1020 cm-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.

Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 399-402
Author(s):  
Roberta Nipoti ◽  
Antonella Parisini ◽  
Alberto Carnera ◽  
Cristiano Albonetti ◽  
Salvatore Vantaggio ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Impurity Band ◽  
Temperature Range ◽  
Hole Conduction ◽  
P Type ◽  
Electrical Characterizations ◽  
Post Implantation ◽  
Ion Implanted

P-type 4H-SiC layers have been obtained by different 400°C Al+ ion implantation processes of semi insulating 4H-SiC wafers and identical 1950°C/5 min post implantation annealing. Implanted Al+ concentration have been 4.7×1018, 9.3×1018, and 4.7×1019 cm-3, thickness of the implanted layer about 630 nm. Electrical characterizations have been performed in the temperature range 100 – 580 K. With decreasing temperature, the onset of a hole conduction through an impurity band has been seen for all the specimens.

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

Post-implantation defects in heavy ion implanted monocrystalline ZnO

2021 ◽  
pp. 1-11
Author(s):  
Zbigniew Werner ◽  
Marek Barlak ◽  
Renata Ratajczak ◽  
Shavkat Akhmadaliev ◽  
René Heller ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Post Implantation ◽  
Ion Implanted
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