High drain current-voltage product of submicrometer-gate ion-implanted GaAs MESFET's for millimeter-wave operation

1992 ◽  
Vol 13 (9) ◽  
pp. 445-447 ◽  
Author(s):  
T. Hwang ◽  
M. Feng
Keyword(s):  
Millimeter Wave ◽  
Drain Current ◽  
Current Voltage ◽  
Ion Implanted

ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-223-C4-226 ◽  
Author(s):  
G. POST ◽  
P. DIMITRIOU ◽  
A. FALCOU ◽  
N. DUHAMEL ◽  
G. MERMANT
Keyword(s):  
Drain Current ◽  
Current Drift ◽  
Ion Implanted

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

Gate Controlled Negative Differential Resistance and Photoconductivity Enhancement in Carbon Nanotube Addressable Intra-connects

2008 ◽  
Vol 1142 ◽  
Author(s):  
Seon Woo Lee ◽  
Slava Rotkin ◽  
Andrei Sirenko ◽  
Daniel Lopez ◽  
Avi Kornblit ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Drain Current ◽  
Differential Resistance ◽  
Radial Breathing Mode ◽  
Light Illumination ◽  
Metal Electrodes ◽  
Current Voltage ◽  
P Type

ABSTRACTWe have observed gate-controlled N-shaped negative differential resistance (NDR) and photoconductivity enhancement in carbon nanotube (CNT) based addressable intra-connects. The intra-connects – bridges spanning across planar electrodes – were measured at room temperature. Individual single-walled CNT (SWCNT) channels were grown using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes without post-processing. The electrodes were made of cobalt. Methane and H2 gas mixture were introduced into quartz tube for an hour at 900 C, with flow rate of 1900 sccm for methane and 20 sccm for H2. We have investigated two different cases: in one case, the source-drain current-voltage, Ids-Vds, characteristics were linear. The other case exhibited nonlinear Ids-Vds characteristics. Raman scattering of the intra-connects indicated that each were made of SWCNT with radial breathing mode (RBM) at 191.9 cm-1 and 176.2 cm-1, respectively. Current-voltage Ids-Vds characteristics were measured for various Vgs from -10 V to +10 V. Negative differential resistance (NDR) was found in the Ids-Vgs curves for gate bias in the region of -3>Vgs>-6 V. The NDR peak was shifted to the negative side as the source-drain voltage was increased from Vds=0 to 0.75 V. Otherwise, the intra-connects exhibited characteristics of an ordinary p-type channel. The experiments were repeated under white light illumination. The light increases the carrier density in the channel but not in the metal electrodes and allowed us to study the effective doping of the channel without affecting the work function of the SWCNT/metal contact. The overall channel conductance increased under the light irradiation. Under illumination, the devices became more stable, as well. In summary, we have investigated contact properties between a SWCNT intra-connect and metal electrodes in a well controlled layout settings.

scholarly journals Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP

2021 ◽  
Vol 55 (10) ◽  
pp. 890
Author(s):  
В.А. Беляков ◽  
И.В. Макарцев ◽  
А.Г. Фефелов ◽  
С.В. Оболенский ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Inp Substrate ◽  
Current Voltage ◽  
Unity Gain

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

scholarly journals Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1037
Author(s):  
Carlo De Santi ◽  
Matteo Buffolo ◽  
Gaudenzio Meneghesso ◽  
Enrico Zanoni ◽  
Matteo Meneghini
Keyword(s):  
Deep Level ◽  
Dynamic Performance ◽  
Electronic Devices ◽  
Drain Current ◽  
Performance Variation ◽  
Current Voltage ◽  
Real Performance ◽  
Frequency Sweeps ◽  
Current Transients ◽  
Extract Information

In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to the detection of all the possible effects, as well as to the choice of the optimal filling and measure bias conditions in other techniques. The drain current transients use one of the identified bias configurations to extract information on the deep level signature responsible for the performance variation and, thus, they can pinpoint the corresponding physical crystal lattice configuration, providing useful information to the growers on how the issue can be solved. Finally, given the complex interplay between the filling and emission time constants, the gate frequency sweeps can be used to obtain the real performance in the target operating condition.

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