Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress

2008 ◽  
Vol 104 (4) ◽  
pp. 044511 ◽  
Author(s):  
Sang-Soo Hwang ◽  
Sung-Yup Jung ◽  
Young-Chang Joo
Keyword(s):  
Leakage Current ◽  
Temperature Stress ◽  
Dielectric Layer ◽  
Cu Migration ◽  
Bias Temperature Stress

scholarly journals Analysis of Leakage Current in Cu/SiO2/Si/Al Capacitors under Bias-Temperature Stress

2003 ◽  
Vol 42 (Part 1, No. 10) ◽  
pp. 6384-6389 ◽  
Author(s):  
Hirotaka Nishino ◽  
Takuya Fukuda ◽  
Hiroshi Yanazawa ◽  
Hironori Matsunaga
Keyword(s):  
Leakage Current ◽  
Temperature Stress ◽  
Bias Temperature Stress

Cu diffusion into the glass under bias temperature stress condition for through glass vias (TGV) applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000259-000263
Author(s):  
Hoon Kim ◽  
Ling Cai ◽  
Albert Fahey ◽  
Rajesh Vaddi ◽  
Bin Zhu ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Diffusion Barrier ◽  
Arrhenius Plot ◽  
Stress Test ◽  
Electrical Field ◽  
Electrical Fields ◽  
Cu Diffusion Barrier ◽  
Cu Migration ◽  
Bias Temperature Stress ◽  
Cu Diffusivity

Abstract For Through Glass Via (TGV) applications, significant copper migration in-between vias would result in failure of the device. The Cu migration occurs due to a combination of thermal and applied electrical field. Thus, it is critical to generate data of Cu diffusivity through glass as function of temperature and electrical field to determine whether a Cu diffusion barrier is required for this application. In this study, the Cu diffusion profiles in the Corning SG 3.4 glass, under varying electrical fields and temperature are evaluated. Using a planar capacitance test structure and a bias temperature stress test at elevated temperature, an Arrhenius plot of Cu diffusivity was obtained. Cu diffusion in the SG 3.4 glass has an activation energy of 1.1 eV which is in the range of thermal SiO2 and low-k of the references. Based on this Arrhenius plot, Cu diffusion depth at various combinations of operating temperatures and electrical fields can be determined. Based on the calculated diffusion lengths we infer that Cu diffusion barrier may not be required in most TGV applications.

Drain bias dependent bias temperature stress instability in a-Si:H TFT

2009 ◽  
Vol 53 (2) ◽  
pp. 225-233 ◽  
Author(s):  
Z. Tang ◽  
M.S. Park ◽  
S.H. Jin ◽  
C.R. Wie
Keyword(s):  
Temperature Stress ◽  
Drain Bias ◽  
Bias Temperature Stress
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