Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress

2017 ◽  
Vol 121 (3) ◽  
pp. 034501 ◽  
Author(s):  
Piyas Samanta ◽  
Krishna C. Mandal
Keyword(s):  
Leakage Current ◽  
Temperature Stress ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Hole Injection ◽  
Positive Bias ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Current Conduction ◽  
Bias Temperature Stress

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS

2001 ◽  
Vol 11 (03) ◽  
pp. 751-787 ◽  
Author(s):  
J. W. McPHERSON
Keyword(s):  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Hole Injection ◽  
Time Dependent Dielectric Breakdown ◽  
Bond Breakage ◽  
Bond Strengths ◽  
Breakage Mechanism ◽  
Molecular Bonding

A molecular physics-based complementary model, which includes both field-induced and current-induced degradation mechanisms, is used to help resolve the E versus 1/E time-dependent dielectric breakdown (TDDB) model controversy that has existed for many years. The Complementary Model indicates either the E or 1/E–TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes at lower fields and elevated temperatures where the E-model is valid. At higher fields, lower temperatures and higher bond strengths the bond breakage mechanism must be hole-catalyzed and the TDDB physics is described well by the 1/E-model. Neither the E-model nor 1/E-model works well for oxide thickness below tox < 4 nm where direct tunneling effects dominate in these hyper-thin films. The increase in DT leakage leads to more hole injection and trapping in the SiO 2. This enhanced dielectric degradation rate with tox reduction can be easily incorporated into the Complementary Model where hole capture serves to catalyze Si–O bond breakage.

Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors

2008 ◽  
Vol 8 (4) ◽  
pp. 635-641 ◽  
Author(s):  
Moshe Gurfinkel ◽  
Justin C. Horst ◽  
John S. Suehle ◽  
Joseph B. Bernstein ◽  
Yoram Shapira ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

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